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Jingdao Microelectronics MBR5200DS
| Hersteller | Jingdao MicroelectronicsAsian Brands |
| Herst.-Teilenr. | MBR5200DS |
| LCSC-Nr. | C668250 |
| Verp. | TO-252 |
| Kundennummer | |
| Hauptmerkm. | DIODE SCHOTTKY 200V TO-252 |
| Datenblatt | Jingdao Microelectronics MBR5200DS |
| Alternativteile | 1 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Jingdao Microelectronics | |
| Verp. | TO-252 | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 920mV@5A | |
| Reverse Leakage Current (Ir) | 50uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 120A | |
| Current - Rectified | 5A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Jingdao Microelectronics | |
| Verp. | TO-252 | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Typ | Beschreibung | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 920mV@5A | |
| Reverse Leakage Current (Ir) | 50uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 120A | |
| Current - Rectified | 5A |
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Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 20Vielfaches: 20Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 20+ | $ 0.0383 | $ 0.77 |
| 200+ | $ 0.0315 | $ 6.30 |
| 600+ | $ 0.0278 | $ 16.68 |
| 2,500+ | $ 0.0248 | $ 62.00 |
| 10,000+ | $ 0.0228 | $ 228.00 |
| 20,000+ | $ 0.0217 | $ 434.00 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Jingdao Microelectronics | |
| Verp. | TO-252 | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 920mV@5A | |
| Reverse Leakage Current (Ir) | 50uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 120A | |
| Current - Rectified | 5A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Jingdao Microelectronics | |
| Verp. | TO-252 | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Typ | Beschreibung | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Voltage - Forward(Vf@If) | 920mV@5A | |
| Reverse Leakage Current (Ir) | 50uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 120A | |
| Current - Rectified | 5A |
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Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| MBR10200DY | Jingdao Microelectronics | Ähnliche | TO-252 | 440 | $ 0.1997 |