GeneSiC Semiconductor MBR12040CT
| Hersteller | |
| Herst.-Teilenr. | MBR12040CT |
| LCSC-Nr. | C6589523 |
| Verp. | - |
| Kundennummer | |
| Hauptmerkm. | 1 Pair Common Cathode 120A 40V 650mV@120A Diode Arrays RoHS |
| Datenblatt | GeneSiC Semiconductor MBR12040CT |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | 800A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 120A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 40V | |
| Voltage - Forward(Vf@If) | 650mV@120A | |
| Reverse Leakage Current (Ir) | 1mA@40V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | 800A | |
| Diode Configuration | 1 Pair Common Cathode |
| Typ | Beschreibung | |
|---|---|---|
| Current - Rectified | 120A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 40V | |
| Voltage - Forward(Vf@If) | 650mV@120A | |
| Reverse Leakage Current (Ir) | 1mA@40V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- High surge capability
- VRRM ratings from 20V to 40V
- Insensitive to ESD
- Dual tower package
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 151.9584 | $ 151.96 |
| 200+ | $ 60.6324 | $ 12126.48 |
| 480+ | $ 58.6062 | $ 28130.98 |
| 1,000+ | $ 57.606 | $ 57606.00 |
Standardgehäuse40/Full Bag | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | 800A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 120A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 40V | |
| Voltage - Forward(Vf@If) | 650mV@120A | |
| Reverse Leakage Current (Ir) | 1mA@40V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | 800A | |
| Diode Configuration | 1 Pair Common Cathode |
| Typ | Beschreibung | |
|---|---|---|
| Current - Rectified | 120A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 40V | |
| Voltage - Forward(Vf@If) | 650mV@120A | |
| Reverse Leakage Current (Ir) | 1mA@40V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- High surge capability
- VRRM ratings from 20V to 40V
- Insensitive to ESD
- Dual tower package
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

