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EDA-ModelleEasyEDA
DOINGTER DOZ4614D
| Hersteller | DOINGTERAsian Brands |
| Herst.-Teilenr. | DOZ4614D |
| LCSC-Nr. | C54110293 |
| Verp. | DFN-8D(3x3) |
| Kundennummer | |
| Hauptmerkm. | 40V 20A 35W 14mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel DFN-8D(3x3) Single FETs, MOSFETs |
| Datenblatt | DOINGTER DOZ4614D |
| Alternativteile | 2 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DOINGTER | |
| Verp. | DFN-8D(3x3) | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 346pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss) | 11pF | |
| RDS(on) | 14mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 13nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel + P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DOINGTER | |
| Verp. | DFN-8D(3x3) | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 346pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss) | 11pF | |
| RDS(on) | 14mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 13nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel + P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This MOSFET series features N-channel devices manufactured using advanced SGT technology and P-channel devices utilizing trench technology and design, delivering excellent on-resistance at low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- N-channel: VDS = 40V, ID = 20A, RDS(ON) < 17mΩ at VGS = 10V (typical: 13mΩ)
- P-channel: VDS = -40V, ID = -20A, RDS(ON) < 50mΩ at VGS = -10V (typical: 38mΩ)
- Low gate charge
- Lead-free devices available
- Ultra-low RDS(ON) achieved via advanced high cell density trench technology
- Excellent package with good thermal dissipation
- MSL3
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 1,190
1,190 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.1006 | $ 0.50 |
| 50+ | $ 0.0801 | $ 4.01 |
| 150+ | $ 0.0699 | $ 10.49 |
| 500+ | $ 0.0622 | $ 31.10 |
| 2,500+ | $ 0.0561 | $ 140.25 |
| 5,000+ | $ 0.053 | $ 265.00 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DOINGTER | |
| Verp. | DFN-8D(3x3) | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 346pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss) | 11pF | |
| RDS(on) | 14mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 13nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel + P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DOINGTER | |
| Verp. | DFN-8D(3x3) | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 346pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss) | 11pF | |
| RDS(on) | 14mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 13nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel + P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This MOSFET series features N-channel devices manufactured using advanced SGT technology and P-channel devices utilizing trench technology and design, delivering excellent on-resistance at low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- N-channel: VDS = 40V, ID = 20A, RDS(ON) < 17mΩ at VGS = 10V (typical: 13mΩ)
- P-channel: VDS = -40V, ID = -20A, RDS(ON) < 50mΩ at VGS = -10V (typical: 38mΩ)
- Low gate charge
- Lead-free devices available
- Ultra-low RDS(ON) achieved via advanced high cell density trench technology
- Excellent package with good thermal dissipation
- MSL3
C54110293 EasyEDA-Bibliothek
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Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |