Infineon IPP60R040C7
| Produttore | |
| Cod. Prod. | IPP60R040C7 |
| Cod. LCSC | C537185 |
| Imballo | TO-220-3 |
| Numero Cliente | |
| Attr. chiave | 227W 600V 73A 4V 40mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | Infineon IPP60R040C7 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 4 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-220-3 | |
| Output Capacitance(Coss) | 85pF | |
| Pd - Power Dissipation | 227W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 73A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.34nF | |
| Gate Charge(Qg) | 107nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-220-3 | |
| Output Capacitance(Coss) | 85pF | |
| Pd - Power Dissipation | 227W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 73A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.34nF | |
| Gate Charge(Qg) | 107nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
CoolMOS™ C7 is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The 600V CoolMOS™ C7 series combines the expertise of a leading SJ MOSFET supplier with best-in-class innovative technology. The 600V C7 is the first technology to achieve an RDS(on) × die area product of below 1Ω·mm².
Caratteristiche
Traduzione AI
- Suitable for hard-switching and soft-switching (PFC and high-performance LLC)
- Enhanced MOSFET dv/dt robustness up to 120V/ns
- Improved efficiency with best-in-class figures of merit RDS(on) * Eoss and RDS(on) * Qg
- Best-in-class RDS(on)/package
- Qualified for industrial applications per JEDEC (J-STD20 and JESD22)
Applicazioni
Traduzione AI
- PFC and PWM stages (TTF, LLC) for high-power/high-performance SMPS, such as computers, servers, telecommunications, UPS, and solar applications.
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 5
5 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 8.7708 | $ 8.77 |
| 10+ | $ 8.5626 | $ 85.63 |
| 30+ | $ 8.4243 | $ 252.73 |
| 100+ | $ 8.286 | $ 828.60 |
Package Standard500/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-220-3 | |
| Output Capacitance(Coss) | 85pF | |
| Pd - Power Dissipation | 227W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 73A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.34nF | |
| Gate Charge(Qg) | 107nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-220-3 | |
| Output Capacitance(Coss) | 85pF | |
| Pd - Power Dissipation | 227W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 73A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.34nF | |
| Gate Charge(Qg) | 107nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
CoolMOS™ C7 is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The 600V CoolMOS™ C7 series combines the expertise of a leading SJ MOSFET supplier with best-in-class innovative technology. The 600V C7 is the first technology to achieve an RDS(on) × die area product of below 1Ω·mm².
Caratteristiche
Traduzione AI
- Suitable for hard-switching and soft-switching (PFC and high-performance LLC)
- Enhanced MOSFET dv/dt robustness up to 120V/ns
- Improved efficiency with best-in-class figures of merit RDS(on) * Eoss and RDS(on) * Qg
- Best-in-class RDS(on)/package
- Qualified for industrial applications per JEDEC (J-STD20 and JESD22)
Applicazioni
Traduzione AI
- PFC and PWM stages (TTF, LLC) for high-power/high-performance SMPS, such as computers, servers, telecommunications, UPS, and solar applications.
C537185 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| IPP60R037CM8XKSA1 | Infineon | TO-220-3 | 948 | $ 6.1308 | ||
| IPP60R016CM8XKSA1 | Infineon | TO-220-3 | 0 | $ 18.5744 | ||
| AOT190A60L | AOS | TO-220 | 0 | $ 2.1667 | ||
| IPP60R080P7 | Infineon | TO-220-3 | 0 | $ 5.0461 |



