Abbildung ähnlich
EDA-ModelleEasyEDA
Infineon BCR 183W H6327
| Hersteller | |
| Herst.-Teilenr. | BCR 183W H6327 |
| LCSC-Nr. | C533860 |
| Verp. | SOT-323-3 |
| Kundennummer | |
| Hauptmerkm. | 50V 30 100mA 250mW 1 PNP Pre-Biased PNP SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS |
| Datenblatt | Infineon BCR 183W H6327 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Infineon | |
| Verp. | SOT-323-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 30 | |
| Emitter-Base Voltage VEBO | - | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.1 | |
| Pd - Power Dissipation | 250mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1V@2mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 1.8V@100uA,5V | |
| Operating temperature | - | |
| Number | 1 PNP Pre-Biased | |
| type | PNP |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Infineon | |
| Verp. | SOT-323-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 30 | |
| Emitter-Base Voltage VEBO | - | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.1 | |
| Pd - Power Dissipation | 250mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1V@2mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 1.8V@100uA,5V | |
| Operating temperature | - | |
| Number | 1 PNP Pre-Biased | |
| type | PNP |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Switching circuits, inverters, interface circuits, and driver circuits
- Built-in bias resistors (R₁ = 10 kΩ, R₂ = 10 kΩ)
- BCR183S / U: Two internally isolated and well-matched transistors in a single multi-chip package
- Lead-free (RoHS compliant) package
- Qualified to AEC Q101
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.0622 | $ 0.06 |
| 200+ | $ 0.0241 | $ 4.82 |
| 500+ | $ 0.0233 | $ 11.65 |
| 1,000+ | $ 0.0228 | $ 22.80 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Infineon | |
| Verp. | SOT-323-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 30 | |
| Emitter-Base Voltage VEBO | - | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.1 | |
| Pd - Power Dissipation | 250mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1V@2mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 1.8V@100uA,5V | |
| Operating temperature | - | |
| Number | 1 PNP Pre-Biased | |
| type | PNP |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | Infineon | |
| Verp. | SOT-323-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 30 | |
| Emitter-Base Voltage VEBO | - | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.1 | |
| Pd - Power Dissipation | 250mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1V@2mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 1.8V@100uA,5V | |
| Operating temperature | - | |
| Number | 1 PNP Pre-Biased | |
| type | PNP |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Switching circuits, inverters, interface circuits, and driver circuits
- Built-in bias resistors (R₁ = 10 kΩ, R₂ = 10 kΩ)
- BCR183S / U: Two internally isolated and well-matched transistors in a single multi-chip package
- Lead-free (RoHS compliant) package
- Qualified to AEC Q101
C533860 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
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