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ST SCT070HU120G3AG
| Produttore | |
| Cod. Prod. | SCT070HU120G3AG |
| Cod. LCSC | C5268799 |
| Imballo | HU3PAK |
| Numero Cliente | |
| Attr. chiave | Automotive-grade silicon carbide Power MOSFET 1200V, 63 mΩ typ., 30 A |
| Scheda Tecnica | ST SCT070HU120G3AG |
| Conformità RoHS | 3 documenti disponibili |
| Parti alternative | 2 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | HU3PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V | |
| Pd - Power Dissipation | 223W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 87mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 900pF | |
| Gate Charge(Qg) | 37nC | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | HU3PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 223W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 87mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 900pF | |
| Gate Charge(Qg) | 37nC | |
| Type | N-Channel |
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Descrizione
Traduzione AI
This silicon carbide Power MOSFET device has been developed using ST's advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Caratteristiche
Traduzione AI
- AEC-Q101 qualified
- Ultra-low Rds(on) across full temperature range
- High-speed switching performance
- Very fast and robust intrinsic body diode
- Source sense pin for improved efficiency
Applicazioni
Traduzione AI
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On-board charger (OBC)
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100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 41
41 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 18.7167 | $ 18.72 |
| 10+ | $ 18.4725 | $ 184.73 |
| 30+ | $ 18.051 | $ 541.53 |
| 100+ | $ 17.6832 | $ 1768.32 |
Package Standard600/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | HU3PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V | |
| Pd - Power Dissipation | 223W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 87mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 900pF | |
| Gate Charge(Qg) | 37nC | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | HU3PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 223W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 87mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 900pF | |
| Gate Charge(Qg) | 37nC | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This silicon carbide Power MOSFET device has been developed using ST's advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Caratteristiche
Traduzione AI
- AEC-Q101 qualified
- Ultra-low Rds(on) across full temperature range
- High-speed switching performance
- Very fast and robust intrinsic body diode
- Source sense pin for improved efficiency
Applicazioni
Traduzione AI
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On-board charger (OBC)
C5268799 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Tipo | Dettagli |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| SCT040HU120G3AG | ST | Simili | HU3PAK | 0 | $ 28.8814 | ||
| SCT020HU120G3AG | ST | Simili | HU3PAK | 0 | $ 25.4528 |
2 altri componenti alternativi.Visualizza tutti i sostituti