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Bestirpower BKE120N075HS1
| Hersteller | BestirpowerAsian Brands |
| Herst.-Teilenr. | BKE120N075HS1 |
| LCSC-Nr. | C52269258 |
| Verp. | TO247-3PLUS |
| Kundennummer | |
| Hauptmerkm. | 883W 150A 1.2kV FS (Field Stop) TO247-3PLUS Single IGBTs |
| Datenblatt | Bestirpower BKE120N075HS1 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | Bestirpower | |
| Verp. | TO247-3PLUS | |
| Td(off) | 109ns | |
| Pd - Power Dissipation | 883W | |
| Td(on) | 93ns | |
| Current - Collector(Ic) | 150A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 36.72pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@2mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.2V@75A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 90ns | |
| Switching Energy(Eoff) | 2.8mJ | |
| Turn-On Energy (Eon) | 2.4mJ | |
| Input Capacitance(Cies) | 5.774uF@25V | |
| Output Capacitance(Coes) | 313.8pF | |
| Gate Charge(Qg) | 170nC@75A,960V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | Bestirpower | |
| Verp. | TO247-3PLUS | |
| Td(off) | 109ns | |
| Pd - Power Dissipation | 883W | |
| Td(on) | 93ns | |
| Current - Collector(Ic) | 150A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 36.72pF | |
| IGBT Type | FS (Field Stop) |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@2mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.2V@75A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 90ns | |
| Switching Energy(Eoff) | 2.8mJ | |
| Turn-On Energy (Eon) | 2.4mJ | |
| Input Capacitance(Cies) | 5.774uF@25V | |
| Output Capacitance(Coes) | 313.8pF | |
| Gate Charge(Qg) | 170nC@75A,960V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
BKE120N075HS1 is an advanced Trench FS IGBT featuring ultra-low gate charge. It achieves significantly higher efficiency through optimized gate charge management, while its user-friendly design offers advantages such as low EMI and reduced switching losses.
Merkmale
KI-Übersetzung
- Maximum junction temperature Tvjmax = 175°C
- Low saturation voltage VCEsat = 2.20 V at Tvj = 25°C
- Positive temperature coefficient of VCEsat, suitable for parallel operation
Anwendungen
KI-Übersetzung
- Uninterruptible Power Supply
- Solar Inverter
- Energy Storage System
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 3.7529 | $ 3.75 |
| 10+ | $ 3.1613 | $ 31.61 |
| 30+ | $ 2.8073 | $ 84.22 |
| 90+ | $ 2.4517 | $ 220.65 |
| 450+ | $ 2.2878 | $ 1029.51 |
| 900+ | $ 2.2124 | $ 1991.16 |
Standardgehäuse30/Full Tube | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | Bestirpower | |
| Verp. | TO247-3PLUS | |
| Td(off) | 109ns | |
| Pd - Power Dissipation | 883W | |
| Td(on) | 93ns | |
| Current - Collector(Ic) | 150A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 36.72pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@2mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.2V@75A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 90ns | |
| Switching Energy(Eoff) | 2.8mJ | |
| Turn-On Energy (Eon) | 2.4mJ | |
| Input Capacitance(Cies) | 5.774uF@25V | |
| Output Capacitance(Coes) | 313.8pF | |
| Gate Charge(Qg) | 170nC@75A,960V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | Bestirpower | |
| Verp. | TO247-3PLUS | |
| Td(off) | 109ns | |
| Pd - Power Dissipation | 883W | |
| Td(on) | 93ns | |
| Current - Collector(Ic) | 150A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 36.72pF | |
| IGBT Type | FS (Field Stop) |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@2mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.2V@75A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 90ns | |
| Switching Energy(Eoff) | 2.8mJ | |
| Turn-On Energy (Eon) | 2.4mJ | |
| Input Capacitance(Cies) | 5.774uF@25V | |
| Output Capacitance(Coes) | 313.8pF | |
| Gate Charge(Qg) | 170nC@75A,960V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
BKE120N075HS1 is an advanced Trench FS IGBT featuring ultra-low gate charge. It achieves significantly higher efficiency through optimized gate charge management, while its user-friendly design offers advantages such as low EMI and reduced switching losses.
Merkmale
KI-Übersetzung
- Maximum junction temperature Tvjmax = 175°C
- Low saturation voltage VCEsat = 2.20 V at Tvj = 25°C
- Positive temperature coefficient of VCEsat, suitable for parallel operation
Anwendungen
KI-Übersetzung
- Uninterruptible Power Supply
- Solar Inverter
- Energy Storage System
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |