JUXING 16N65F
| Hersteller | JUXINGAsian Brands |
| Herst.-Teilenr. | 16N65F |
| LCSC-Nr. | C52211904 |
| Verp. | ITO-220AB |
| Kundennummer | |
| Hauptmerkm. | 98W 650V 16A 2V 450mΩ@10V 1 N-channel N-Channel ITO-220AB Single FETs, MOSFETs |
| Datenblatt | JUXING 16N65F |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JUXING | |
| Verp. | ITO-220AB | |
| Output Capacitance(Coss) | 295pF | |
| Pd - Power Dissipation | 98W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | - | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF | |
| RDS(on) | 450mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.49nF | |
| Gate Charge(Qg) | 50nC | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JUXING | |
| Verp. | ITO-220AB | |
| Output Capacitance(Coss) | 295pF | |
| Pd - Power Dissipation | 98W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | - | |
| Current - Continuous Drain(Id) | 16A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF | |
| RDS(on) | 450mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.49nF | |
| Gate Charge(Qg) | 50nC | |
| Vgs | ±30V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
16N65S/F N-channel enhancement-mode high-voltage power MOSFETs are manufactured using MDmesh™ M2 process technology. These devices feature low on-state resistance, superior switching performance, and high avalanche breakdown ruggedness. They are widely applicable in AC-DC switching power supplies, DC-DC power converters, and high-voltage H-bridge PWM motor drives.
Merkmale
KI-Übersetzung
- 16A, 650V, RDS(on)(typ)=0.45Ω@VGS=10V
- Low gate charge
- Low reverse transfer capacitance
- Fast switching speed
- Improved dv/dt capability
Anwendungen
KI-Übersetzung
- AC-DC switching power supply
- DC-DC power converter
- High-voltage H-bridge PWM motor driver
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 81
81 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.7565 | $ 0.76 |
| 10+ | $ 0.6415 | $ 6.42 |
| 50+ | $ 0.5831 | $ 29.16 |
| 100+ | $ 0.5265 | $ 52.65 |
| 500+ | $ 0.4924 | $ 246.20 |
| 1,000+ | $ 0.4746 | $ 474.60 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JUXING | |
| Verp. | ITO-220AB | |
| Output Capacitance(Coss) | 295pF | |
| Pd - Power Dissipation | 98W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | - | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF | |
| RDS(on) | 450mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.49nF | |
| Gate Charge(Qg) | 50nC | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JUXING | |
| Verp. | ITO-220AB | |
| Output Capacitance(Coss) | 295pF | |
| Pd - Power Dissipation | 98W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | - | |
| Current - Continuous Drain(Id) | 16A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF | |
| RDS(on) | 450mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.49nF | |
| Gate Charge(Qg) | 50nC | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
16N65S/F N-channel enhancement-mode high-voltage power MOSFETs are manufactured using MDmesh™ M2 process technology. These devices feature low on-state resistance, superior switching performance, and high avalanche breakdown ruggedness. They are widely applicable in AC-DC switching power supplies, DC-DC power converters, and high-voltage H-bridge PWM motor drives.
Merkmale
KI-Übersetzung
- 16A, 650V, RDS(on)(typ)=0.45Ω@VGS=10V
- Low gate charge
- Low reverse transfer capacitance
- Fast switching speed
- Improved dv/dt capability
Anwendungen
KI-Übersetzung
- AC-DC switching power supply
- DC-DC power converter
- High-voltage H-bridge PWM motor driver
C52211904 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



