LCSC Electronics logoLCSC Electronics svg logo
로그인
USD
TI LMG3425R030RQZT product image
  • LMG3425R030RQZT thumbnail 1
  • LMG3425R030RQZT thumbnail 2
  • LMG3425R030RQZT thumbnail 3
  • 핀아웃
  • 풋프린트
실제 제품과 다를 수 있음

TI LMG3425R030RQZT

제조업체
제조사 품번
LMG3425R030RQZT
LCSC 번호
C5218879
포장
VQFN-54(12x12)
고객 번호
주요 제원
VQFN-54(12x12) Power Distribution Switches, Load Drivers RoHS
데이터시트TI LMG3425R030RQZT
RoHS 준수1개 문서 이용 가능
모든 주문 보장
100% 정품 · 30일 반품 또는 교환
재고 있음: 3
3 재고 있음, 당일 발송
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
수량단가총액
1+$ 40.0403$ 40.04
30+$ 38.1732$ 1145.20
표준 패키지250/Full Reel
수량이 많을수록 더 좋은 가격?
$

제품 사양

전체
도움말 및 피드백유사 제품 보기 (0) >

개요

AI 번역

The LMG342xR030 GaN FET features an integrated driver and protection functions, enabling designers to achieve a higher level of power density and efficiency in power electronics systems. The LMG342xR030 integrates a silicon driver, capable of achieving a switching speed of up to 150V/ns. Compared with discrete silicon gate drivers, TI's integrated precision gate bias enables a higher switching SOA. This integration feature, combined with TI's low-inductance packaging technology, provides clean switching and ultra-low ringing in hard-switching power supply topologies. The adjustable gate drive strength allows the slew rate to be controlled between 20 V/ns and 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R030 includes an ideal diode mode, which reduces third-quadrant losses by enabling the adaptive dead-time control function. Advanced power management functions include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable-duty-cycle PWM output, which simplifies device load management. Reported faults include over-temperature, over-current, and UVLO monitoring.

주요 특징

AI 번역
  • 600-V GaN-on-Si FET with integrated gate driver compliant with JEDEC JEP180 for hard-switching topologies
  • Integrated high-accuracy gate bias voltage
  • 200 V/ns CMTI
  • 2.2 MHz switching frequency
  • 30 V/ns to 150 V/ns slew rate for optimized switching performance and EMI mitigation
  • Operates from 7.5 V to 18 V supply
  • Cycle-by-cycle overcurrent and latched short-circuit protection with response time under 100 ns
  • 720 V surge capability during hard switching
  • Self-protection for internal overtemperature and UVLO monitoring
  • Digital temperature PWM output
  • Ideal diode mode to reduce third-quadrant losses in LMG3425R030

응용 분야

AI 번역
  • High-density industrial power supplies
  • Photovoltaic inverters and industrial motor drives
  • Uninterruptible power supplies
  • Commercial networking and server PSUs
  • Commercial communication power rectifiers