TI LMG3425R030RQZT
| 제조업체 | |
| 제조사 품번 | LMG3425R030RQZT |
| LCSC 번호 | C5218879 |
| 포장 | VQFN-54(12x12) |
| 고객 번호 | |
| 주요 제원 | VQFN-54(12x12) Power Distribution Switches, Load Drivers RoHS |
| 데이터시트 | TI LMG3425R030RQZT |
| RoHS 준수 | 1개 문서 이용 가능 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Power Management (PMIC)/Power Distribution Switches, Load Drivers | |
| 제조업체 | TI | |
| 포장 | VQFN-54(12x12) |
| 타입 | 설명 | |
|---|---|---|
| 포장 | VQFN-54(12x12) |
개요
The LMG342xR030 GaN FET features an integrated driver and protection functions, enabling designers to achieve a higher level of power density and efficiency in power electronics systems. The LMG342xR030 integrates a silicon driver, capable of achieving a switching speed of up to 150V/ns. Compared with discrete silicon gate drivers, TI's integrated precision gate bias enables a higher switching SOA. This integration feature, combined with TI's low-inductance packaging technology, provides clean switching and ultra-low ringing in hard-switching power supply topologies. The adjustable gate drive strength allows the slew rate to be controlled between 20 V/ns and 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R030 includes an ideal diode mode, which reduces third-quadrant losses by enabling the adaptive dead-time control function. Advanced power management functions include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable-duty-cycle PWM output, which simplifies device load management. Reported faults include over-temperature, over-current, and UVLO monitoring.
주요 특징
- 600-V GaN-on-Si FET with integrated gate driver compliant with JEDEC JEP180 for hard-switching topologies
- Integrated high-accuracy gate bias voltage
- 200 V/ns CMTI
- 2.2 MHz switching frequency
- 30 V/ns to 150 V/ns slew rate for optimized switching performance and EMI mitigation
- Operates from 7.5 V to 18 V supply
- Cycle-by-cycle overcurrent and latched short-circuit protection with response time under 100 ns
- 720 V surge capability during hard switching
- Self-protection for internal overtemperature and UVLO monitoring
- Digital temperature PWM output
- Ideal diode mode to reduce third-quadrant losses in LMG3425R030
응용 분야
- High-density industrial power supplies
- Photovoltaic inverters and industrial motor drives
- Uninterruptible power supplies
- Commercial networking and server PSUs
- Commercial communication power rectifiers
| 수량 | 단가 | 총액 |
|---|---|---|
| 1+ | $ 40.0403 | $ 40.04 |
| 30+ | $ 38.1732 | $ 1145.20 |
표준 패키지250/Full Reel | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Power Management (PMIC)/Power Distribution Switches, Load Drivers | |
| 제조업체 | TI | |
| 포장 | VQFN-54(12x12) |
| 타입 | 설명 | |
|---|---|---|
| 포장 | VQFN-54(12x12) |
개요
The LMG342xR030 GaN FET features an integrated driver and protection functions, enabling designers to achieve a higher level of power density and efficiency in power electronics systems. The LMG342xR030 integrates a silicon driver, capable of achieving a switching speed of up to 150V/ns. Compared with discrete silicon gate drivers, TI's integrated precision gate bias enables a higher switching SOA. This integration feature, combined with TI's low-inductance packaging technology, provides clean switching and ultra-low ringing in hard-switching power supply topologies. The adjustable gate drive strength allows the slew rate to be controlled between 20 V/ns and 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R030 includes an ideal diode mode, which reduces third-quadrant losses by enabling the adaptive dead-time control function. Advanced power management functions include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable-duty-cycle PWM output, which simplifies device load management. Reported faults include over-temperature, over-current, and UVLO monitoring.
주요 특징
- 600-V GaN-on-Si FET with integrated gate driver compliant with JEDEC JEP180 for hard-switching topologies
- Integrated high-accuracy gate bias voltage
- 200 V/ns CMTI
- 2.2 MHz switching frequency
- 30 V/ns to 150 V/ns slew rate for optimized switching performance and EMI mitigation
- Operates from 7.5 V to 18 V supply
- Cycle-by-cycle overcurrent and latched short-circuit protection with response time under 100 ns
- 720 V surge capability during hard switching
- Self-protection for internal overtemperature and UVLO monitoring
- Digital temperature PWM output
- Ideal diode mode to reduce third-quadrant losses in LMG3425R030
응용 분야
- High-density industrial power supplies
- Photovoltaic inverters and industrial motor drives
- Uninterruptible power supplies
- Commercial networking and server PSUs
- Commercial communication power rectifiers
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |



