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EDA-ModelleEasyEDA
VBsemi Elec PMPB55XNEAX-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | PMPB55XNEAX-VB |
| LCSC-Nr. | C52148649 |
| Verp. | SC-70-6L |
| Kundennummer | |
| Hauptmerkm. | 2.5W 30V 6A 23mΩ@10V 1 N-channel N-Channel SC-70-6L Single FETs, MOSFETs |
| Datenblatt | VBsemi Elec PMPB55XNEAX-VB |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SC-70-6L | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 424pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 6A | |
| Reverse Transfer Capacitance (Crss) | 42pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.2nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SC-70-6L | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 424pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 6A | |
| Reverse Transfer Capacitance (Crss) | 42pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.2nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- Low on-resistance
- 100% gate resistance (Rg) tested
- Compliant with RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- DC/DC converters, high-speed switching
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 10
10 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.7191$ 0.6832 | $ 0.68 |
| 10+ | $ 0.5924$ 0.5628 | $ 5.63 |
| 30+ | $ 0.5299$ 0.5035 | $ 15.11 |
| 100+ | $ 0.4674$ 0.4441 | $ 44.41 |
| 500+ | $ 0.3834$ 0.3643 | $ 182.15 |
| 1,000+ | $ 0.3653$ 0.3471 | $ 347.10 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SC-70-6L | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 424pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 6A | |
| Reverse Transfer Capacitance (Crss) | 42pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.2nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SC-70-6L | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 424pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 6A | |
| Reverse Transfer Capacitance (Crss) | 42pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.2nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- Low on-resistance
- 100% gate resistance (Rg) tested
- Compliant with RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- DC/DC converters, high-speed switching
C52148649 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| BUK6D38-30EX-VB | VBsemi Elec | Ähnliche | SC-70-6L | 10 | $0.6832 $0.7191 | ||
| BUK6D72-30EX-VB | VBsemi Elec | Ähnliche | SC-70-6L | 10 | $0.6832 $0.7191 | ||
| BUK4D60-30X-VB | VBsemi Elec | Ähnliche | SC-70-6L | 10 | $0.6832 $0.7191 | ||
| PMPB25ENEX-VB | VBsemi Elec | Ähnliche | SC-70-6L | 10 | $0.6832 $0.7191 | ||
| PMPB100ENEX-VB | VBsemi Elec | Ähnliche | SC-70-6L | 10 | $1.1319 $1.1914 |