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Zdjęcia poglądowe
Modele EDAEasyEDA
Samwin SWJ7N65D
| Producent | SamwinAsian Brands |
| Nr części prod. | SWJ7N65D |
| Nr LCSC | C5151785 |
| Opak. | TO-262N |
| Numer Klienta | |
| Klucz. cechy | MOSFET 650V 7A TO-262N |
| Karta Katalogowa | Samwin SWJ7N65D |
| Zgodność z RoHS | 5 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Samwin | |
| Opak. | TO-262N | |
| Output Capacitance(Coss) | 108pF | |
| Ciss-Input Capacitance | 1.23nF | |
| Pd - Power Dissipation | 208.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 7A | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 1.1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Samwin | |
| Opak. | TO-262N | |
| Output Capacitance(Coss) | 108pF | |
| Ciss-Input Capacitance | 1.23nF | |
| Pd - Power Dissipation | 208.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 7A | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 1.1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This power MOSFET is manufactured using advanced technology. The technology enables superior characteristics in power MOSFETs, including fast switching times, low on-resistance, low gate charge, and especially excellent avalanche characteristics.
Funkcje
Tłumaczenie AI
- High ruggedness
- RDS(ON) = 0.1 Ω @ VGS = 10V
- Improved dv/dt Capability
- This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Zastosowania
Tłumaczenie AI
- Charger
- LED
- Computer power supply
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Obecnie niedostępne
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Samwin | |
| Opak. | TO-262N | |
| Output Capacitance(Coss) | 108pF | |
| Ciss-Input Capacitance | 1.23nF | |
| Pd - Power Dissipation | 208.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 7A | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 1.1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Samwin | |
| Opak. | TO-262N | |
| Output Capacitance(Coss) | 108pF | |
| Ciss-Input Capacitance | 1.23nF | |
| Pd - Power Dissipation | 208.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 7A | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 1.1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This power MOSFET is manufactured using advanced technology. The technology enables superior characteristics in power MOSFETs, including fast switching times, low on-resistance, low gate charge, and especially excellent avalanche characteristics.
Funkcje
Tłumaczenie AI
- High ruggedness
- RDS(ON) = 0.1 Ω @ VGS = 10V
- Improved dv/dt Capability
- This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Zastosowania
Tłumaczenie AI
- Charger
- LED
- Computer power supply
C5151785 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |