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EDA-ModelleEasyEDA
VBsemi Elec MMBF170-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | MMBF170-VB |
| LCSC-Nr. | C5137376 |
| Verp. | SOT-23(TO-236) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 60V 250mA SOT-23(TO-236) |
| Datenblatt | VBsemi Elec MMBF170-VB |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 5pF | |
| Current - Continuous Drain(Id) | 250mA | |
| Ciss-Input Capacitance | 25pF | |
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss) | 2pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 400pC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 5pF | |
| Current - Continuous Drain(Id) | 250mA | |
| Ciss-Input Capacitance | 25pF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss) | 2pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 400pC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compliant with halogen-free requirements as defined in IEC 61249-2-21
- Low threshold: 2 V (typical)
- Low input capacitance: 25 pF
- Fast switching speed: 25 ns
- Low input and output leakage current
- Trench power MOSFET
- Compliant with RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Direct logic level interface: TTL/CMOS
- Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Battery-powered systems
- Solid-state relays
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 10Vielfaches: 10Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 10+ | $ 0.0775 | $ 0.78 |
| 100+ | $ 0.0658 | $ 6.58 |
| 300+ | $ 0.0599 | $ 17.97 |
| 3,000+ | $ 0.0546 | $ 163.80 |
| 6,000+ | $ 0.0511 | $ 306.60 |
| 9,000+ | $ 0.0493 | $ 443.70 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 5pF | |
| Current - Continuous Drain(Id) | 250mA | |
| Ciss-Input Capacitance | 25pF | |
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss) | 2pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 400pC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 5pF | |
| Current - Continuous Drain(Id) | 250mA | |
| Ciss-Input Capacitance | 25pF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss) | 2pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 400pC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compliant with halogen-free requirements as defined in IEC 61249-2-21
- Low threshold: 2 V (typical)
- Low input capacitance: 25 pF
- Fast switching speed: 25 ns
- Low input and output leakage current
- Trench power MOSFET
- Compliant with RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Direct logic level interface: TTL/CMOS
- Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Battery-powered systems
- Solid-state relays
C5137376 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| 2V7002LT1G-VB | VBsemi Elec | Ähnliche | SOT-23(TO-236) | 50 | $0.0488 $0.0573 | ||
| 2N7002K-13-VB | VBsemi Elec | Ähnliche | SOT-23(TO-236) | 60 | $ 0.0567 | ||
| BSS7728N-VB | VBsemi Elec | Ähnliche | SOT-23(TO-236) | 30 | $0.0482 $0.0567 | ||
| BSH101-VB | VBsemi Elec | Ähnliche | SOT-23(TO-236) | 50 | $ 0.0565 | ||
| HM3018SR-VB | VBsemi Elec | Ähnliche | SOT-23(TO-236) | 50 | $0.0465 $0.0546 |