- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
NCE NCE65T540D
| Producent | NCEAsian Brands |
| Nr części prod. | NCE65T540D |
| Nr LCSC | C502894 |
| Opak. | TO-263 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 650V 8A TO-263 |
| Karta Katalogowa | NCE NCE65T540D |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | NCE | |
| Opak. | TO-263 | |
| Output Capacitance(Coss) | 37pF | |
| Ciss-Input Capacitance | 590pF | |
| Pd - Power Dissipation | 69W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 0.9pF | |
| RDS(on) | 460mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 14.6nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | NCE | |
| Opak. | TO-263 | |
| Output Capacitance(Coss) | 37pF | |
| Ciss-Input Capacitance | 590pF | |
| Pd - Power Dissipation | 69W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 0.9pF | |
| RDS(on) | 460mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 14.6nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Funkcje
Tłumaczenie AI
- New technology for high voltage device
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS compliant
Zastosowania
Tłumaczenie AI
- Power factor correction（PFC）
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply（UPS）
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 1
1 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 0.7874 | $ 0.79 |
| 10+ | $ 0.6217 | $ 6.22 |
| 30+ | $ 0.5404 | $ 16.21 |
| 100+ | $ 0.4575 | $ 45.75 |
| 500+ | $ 0.4081 | $ 204.05 |
| 800+ | $ 0.3826 | $ 306.08 |
Standardowa Obudowa800/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | NCE | |
| Opak. | TO-263 | |
| Output Capacitance(Coss) | 37pF | |
| Ciss-Input Capacitance | 590pF | |
| Pd - Power Dissipation | 69W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 0.9pF | |
| RDS(on) | 460mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 14.6nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | NCE | |
| Opak. | TO-263 | |
| Output Capacitance(Coss) | 37pF | |
| Ciss-Input Capacitance | 590pF | |
| Pd - Power Dissipation | 69W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 0.9pF | |
| RDS(on) | 460mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 14.6nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Funkcje
Tłumaczenie AI
- New technology for high voltage device
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS compliant
Zastosowania
Tłumaczenie AI
- Power factor correction（PFC）
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply（UPS）
C502894 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| NCE65T360D | NCE | Podobne | TO-263 | 282 | $ 1.3274 | ||
| NCE70T360D | NCE | Podobne | TO-263 | 728 | $ 1.2084 | ||
| NCE65T260D | NCE | Podobne | TO-263 | 752 | $ 1.3606 | ||
| NCE65T180D | NCE | Podobne | TO-263 | 1,047 | $ 2.5345 | ||
| NCE65TF180D | NCE | Podobne | TO-263 | 43 | $ 2.515 |