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EDA-ModelleEasyEDA
NCE NCEP1545G
| Hersteller | NCEAsian Brands |
| Herst.-Teilenr. | NCEP1545G |
| LCSC-Nr. | C489179 |
| Verp. | DFN5X6-8L |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 150V 45A DFN5X6-8L |
| Datenblatt | NCE NCEP1545G |
| Alternativteile | 2 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | DFN5X6-8L | |
| Output Capacitance(Coss) | 162pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 45A | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11.7pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 21.1nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | DFN5X6-8L | |
| Output Capacitance(Coss) | 162pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 45A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11.7pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 21.1nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
NCEP1545G utilizes super trench technology, uniquely optimized to deliver the highest efficiency high-frequency switching performance. The combination of ultra-low RDS(ON) and Qg minimizes both conduction and switching power losses. This device is ideal for high-frequency switching and synchronous rectification applications.
Merkmale
KI-Übersetzung
- VDS = 150V, ID = 45A, RDS(ON) = 24mΩ (typical) at VGS = 10V
- Excellent gate charge × RDS(ON) product (figure of merit FOM)
- Ultra-low on-resistance RDS(ON)
- Operating temperature up to 150°C
- Lead-free lead finish
- 100% tested for single-pulse avalanche energy (UIS)!
- 100% tested for ΔVds!
Anwendungen
KI-Übersetzung
- DC-DC converter
- Ideal for high-frequency switching and synchronous rectification
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.8497 | $ 0.85 |
| 10+ | $ 0.671 | $ 6.71 |
| 30+ | $ 0.5817 | $ 17.45 |
| 100+ | $ 0.4939 | $ 49.39 |
| 500+ | $ 0.4403 | $ 220.15 |
| 1,000+ | $ 0.4127 | $ 412.70 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | DFN5X6-8L | |
| Output Capacitance(Coss) | 162pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 45A | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11.7pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 21.1nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | DFN5X6-8L | |
| Output Capacitance(Coss) | 162pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 45A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11.7pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 21.1nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
NCEP1545G utilizes super trench technology, uniquely optimized to deliver the highest efficiency high-frequency switching performance. The combination of ultra-low RDS(ON) and Qg minimizes both conduction and switching power losses. This device is ideal for high-frequency switching and synchronous rectification applications.
Merkmale
KI-Übersetzung
- VDS = 150V, ID = 45A, RDS(ON) = 24mΩ (typical) at VGS = 10V
- Excellent gate charge × RDS(ON) product (figure of merit FOM)
- Ultra-low on-resistance RDS(ON)
- Operating temperature up to 150°C
- Lead-free lead finish
- 100% tested for single-pulse avalanche energy (UIS)!
- 100% tested for ΔVds!
Anwendungen
KI-Übersetzung
- DC-DC converter
- Ideal for high-frequency switching and synchronous rectification
C489179 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| NCEP1580GU | NCE | DFN-8(5.1x5.8) | 0 | $ 1.1142 | ||
| NCEP1570GU | NCE | DFN-8L(5x6) | 0 | $ 1.1413 |