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Infineon IPW60R099CM8XKSA1
| Produttore | |
| Cod. Prod. | IPW60R099CM8XKSA1 |
| Cod. LCSC | C46642983 |
| Imballo | TO-247-3 |
| Numero Cliente | |
| Attr. chiave | 600V 29A 176W 83mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | Infineon IPW60R099CM8XKSA1 |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 18pF | |
| Current - Continuous Drain(Id) | 29A | |
| Ciss-Input Capacitance | 1.33nF | |
| Pd - Power Dissipation | 176W | |
| RDS(on) | 83mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 31nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 18pF | |
| Current - Continuous Drain(Id) | 29A |
| Tipo | Descrizione | |
|---|---|---|
| Ciss-Input Capacitance | 1.33nF | |
| Pd - Power Dissipation | 176W | |
| RDS(on) | 83mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 31nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
Built on Infineon's world-class superjunction MOSFET platform, this product integrates a fast body diode and is suited for a wide range of applications. It delivers maximum power density at minimum system cost with outstanding reliability. This product enhances Infineon's wide bandgap semiconductor portfolio and is the successor to the 600V CoolMOS™ 7 MOSFET series.
Caratteristiche
Traduzione AI
- Best-in-class SJ MOSFET performance for a wide range of hard-switching and soft-switching applications with excellent commutation robustness
- Integrated fast body diode and ESD protection
- XT interconnect technology for best-in-class thermal performance
Applicazioni
Traduzione AI
- Data centers, AI servers, telecom power supplies
- Micro and residential hybrid inverters
- Portable and residential energy storage, UPS
- EV charging, light electric vehicles, electric forklifts
- High-voltage solid-state power distribution
- Home and professional tools
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 53
53 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 7.3151 | $ 7.32 |
| 10+ | $ 6.5324 | $ 65.32 |
| 30+ | $ 6.0664 | $ 181.99 |
| 90+ | $ 5.5938 | $ 503.44 |
| 510+ | $ 5.3772 | $ 2742.37 |
| 990+ | $ 5.2788 | $ 5226.01 |
Package Standard30/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 18pF | |
| Current - Continuous Drain(Id) | 29A | |
| Ciss-Input Capacitance | 1.33nF | |
| Pd - Power Dissipation | 176W | |
| RDS(on) | 83mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 31nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 18pF | |
| Current - Continuous Drain(Id) | 29A |
| Tipo | Descrizione | |
|---|---|---|
| Ciss-Input Capacitance | 1.33nF | |
| Pd - Power Dissipation | 176W | |
| RDS(on) | 83mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 31nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
Built on Infineon's world-class superjunction MOSFET platform, this product integrates a fast body diode and is suited for a wide range of applications. It delivers maximum power density at minimum system cost with outstanding reliability. This product enhances Infineon's wide bandgap semiconductor portfolio and is the successor to the 600V CoolMOS™ 7 MOSFET series.
Caratteristiche
Traduzione AI
- Best-in-class SJ MOSFET performance for a wide range of hard-switching and soft-switching applications with excellent commutation robustness
- Integrated fast body diode and ESD protection
- XT interconnect technology for best-in-class thermal performance
Applicazioni
Traduzione AI
- Data centers, AI servers, telecom power supplies
- Micro and residential hybrid inverters
- Portable and residential energy storage, UPS
- EV charging, light electric vehicles, electric forklifts
- High-voltage solid-state power distribution
- Home and professional tools
C46642983 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| NVHL080N120SC1A | onsemi | Simili | TO-247-3 | 11 | $ 13.4501 | ||
| WTM54N65AMP | WPMtek | Simili | TO247 | 25 | $ 3.3738 | ||
| IPW60R080P7-VB | VBsemi Elec | Simili | TO-247AC | 5 | $6.0442 $7.1108 | ||
| SiHG080N60E-VB | VBsemi Elec | Simili | TO-247AC | 5 | $4.3321 $5.0965 | ||
| STW42N60M2-EP-VB | VBsemi Elec | Simili | TO-247AC | 1 | $4.3321 $5.0965 |