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Wuxi China Resources Huajing Microelectronics CS45N06A4
| Hersteller | Wuxi China Resources Huajing MicroelectronicsAsian Brands |
| Herst.-Teilenr. | CS45N06A4 |
| LCSC-Nr. | C442411 |
| Verp. | TO-252-2 |
| Kundennummer | |
| Hauptmerkm. | 54.3W 60V 45A 12mΩ@10V 1 N-channel N-Channel TO-252-2 Single FETs, MOSFETs |
| Datenblatt | Wuxi China Resources Huajing Microelectronics CS45N06A4 |
| Alternativteile | 1 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wuxi China Resources Huajing Microelectronics | |
| Verp. | TO-252-2 | |
| Output Capacitance(Coss) | 135pF | |
| Ciss-Input Capacitance | 1.876nF | |
| Pd - Power Dissipation | 54.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 45A | |
| Reverse Transfer Capacitance (Crss) | 102pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43.45nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wuxi China Resources Huajing Microelectronics | |
| Verp. | TO-252-2 | |
| Output Capacitance(Coss) | 135pF | |
| Ciss-Input Capacitance | 1.876nF | |
| Pd - Power Dissipation | 54.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 45A | |
| Reverse Transfer Capacitance (Crss) | 102pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43.45nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
CS45N06 A4 is a silicon N-channel enhancement-mode VDMOSFET fabricated using high-density trench technology to reduce on-state losses, improve switching performance, and enhance avalanche energy capability. The device is suitable for load switching and PWM applications. It is available in a TO-252 package and is RoHS compliant.
Merkmale
KI-Übersetzung
- Fast switching
- Low on-resistance (Rdson ≤ 16mΩ)
- Low gate charge
- Low reverse transfer capacitance
- 100% single-pulse avalanche energy tested
Anwendungen
KI-Übersetzung
- Power switching circuits for adapters and chargers
- LED backlight drivers
- Synchronous rectification
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.2972 | $ 0.30 |
| 10+ | $ 0.2415 | $ 2.42 |
| 30+ | $ 0.2177 | $ 6.53 |
| 100+ | $ 0.1879 | $ 18.79 |
| 500+ | $ 0.1746 | $ 87.30 |
| 1,000+ | $ 0.1667 | $ 166.70 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wuxi China Resources Huajing Microelectronics | |
| Verp. | TO-252-2 | |
| Output Capacitance(Coss) | 135pF | |
| Ciss-Input Capacitance | 1.876nF | |
| Pd - Power Dissipation | 54.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 45A | |
| Reverse Transfer Capacitance (Crss) | 102pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43.45nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Wuxi China Resources Huajing Microelectronics | |
| Verp. | TO-252-2 | |
| Output Capacitance(Coss) | 135pF | |
| Ciss-Input Capacitance | 1.876nF | |
| Pd - Power Dissipation | 54.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 45A | |
| Reverse Transfer Capacitance (Crss) | 102pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43.45nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
CS45N06 A4 is a silicon N-channel enhancement-mode VDMOSFET fabricated using high-density trench technology to reduce on-state losses, improve switching performance, and enhance avalanche energy capability. The device is suitable for load switching and PWM applications. It is available in a TO-252 package and is RoHS compliant.
Merkmale
KI-Übersetzung
- Fast switching
- Low on-resistance (Rdson ≤ 16mΩ)
- Low gate charge
- Low reverse transfer capacitance
- 100% single-pulse avalanche energy tested
Anwendungen
KI-Übersetzung
- Power switching circuits for adapters and chargers
- LED backlight drivers
- Synchronous rectification
C442411 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| CS55N06A4 | Wuxi China Resources Huajing Microelectronics | Ähnliche | TO-252 | 0 | $ 0.3329 |