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XNRUSEMI XR60P04F
| Produttore | XNRUSEMIAsian Brands |
| Cod. Prod. | XR60P04F |
| Cod. LCSC | C42456985 |
| Imballo | PDFN5060-8L |
| Numero Cliente | |
| Attr. chiave | MOSFET P-CH 40V 60A PDFN5060-8L |
| Scheda Tecnica | XNRUSEMI XR60P04F |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | XNRUSEMI | |
| Imballo | PDFN5060-8L | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 430pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 5.295nF | |
| Pd - Power Dissipation | 81.16W | |
| Reverse Transfer Capacitance (Crss) | 385pF | |
| RDS(on) | 8.2mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | XNRUSEMI | |
| Imballo | PDFN5060-8L | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 430pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 5.295nF |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 81.16W | |
| Reverse Transfer Capacitance (Crss) | 385pF | |
| RDS(on) | 8.2mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
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Descrizione
Traduzione AI
XR60P04F is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. XR60P04F complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full-function reliability qualification.
Caratteristiche
Traduzione AI
- Ultra-low gate charge
- 100% guaranteed avalanche ruggedness (EAS)
- Green/RoHS-compliant devices available
- Excellent dv/dt immunity
- Advanced high cell density trench technology
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 1,670
1,670 Pronta consegna
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 5+ | $ 0.2039 | $ 1.02 |
| 50+ | $ 0.1778 | $ 8.89 |
| 150+ | $ 0.1665 | $ 24.98 |
| 500+ | $ 0.1525 | $ 76.25 |
| 2,500+ | $ 0.1463 | $ 365.75 |
| 5,000+ | $ 0.1426 | $ 713.00 |
Package Standard5000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | XNRUSEMI | |
| Imballo | PDFN5060-8L | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 430pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 5.295nF | |
| Pd - Power Dissipation | 81.16W | |
| Reverse Transfer Capacitance (Crss) | 385pF | |
| RDS(on) | 8.2mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | XNRUSEMI | |
| Imballo | PDFN5060-8L | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 430pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 5.295nF |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 81.16W | |
| Reverse Transfer Capacitance (Crss) | 385pF | |
| RDS(on) | 8.2mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
XR60P04F is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. XR60P04F complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full-function reliability qualification.
Caratteristiche
Traduzione AI
- Ultra-low gate charge
- 100% guaranteed avalanche ruggedness (EAS)
- Green/RoHS-compliant devices available
- Excellent dv/dt immunity
- Advanced high cell density trench technology
C42456985 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| XR80P06F | XNRUSEMI | Simili | PDFN-8L(5x6) | 4,585 | $0.3791 $0.399 | ||
| XRS60P06F | XNRUSEMI | Simili | PDFN-8L(5x6) | 2,563 | $0.4174 $0.4393 | ||
| XR80P04F | XNRUSEMI | Simili | PDFN5060-8L | 6,045 | $ 0.3669 | ||
| XR120P04F | XNRUSEMI | Simili | PDFN-8L(5x6) | 6,569 | $0.5284 $0.5562 | ||
| XR60P06F | XNRUSEMI | Simili | PDFN-8L(5x6) | 0 | $0.3770 $0.3968 |