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Modele EDAEasyEDA
HXY MOSFET HDMN10H100SK313
| Producent | HXY MOSFETAsian Brands |
| Nr części prod. | HDMN10H100SK313 |
| Nr LCSC | C42401431 |
| Opak. | TO-252-2L(DPAK) |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 100V 20A TO-252-2L(DPAK) |
| Karta Katalogowa | HXY MOSFET HDMN10H100SK313 |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | TO-252-2L(DPAK) | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 34.7W | |
| RDS(on) | 80mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.535nF | |
| Gate Charge(Qg) | 26.2nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | TO-252-2L(DPAK) | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 34.7W | |
| RDS(on) | 80mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.535nF | |
| Gate Charge(Qg) | 26.2nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The HDMN10H100SK313 utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Funkcje
Tłumaczenie AI
- Drain-Source Voltage (VDS) = 100V, Drain Current (ID) = 20A
- On-State Resistance (RDS(ON)) < 87mΩ at Gate-Source Voltage (VGS) = 10V
Zastosowania
Tłumaczenie AI
- Battery protection
- Load switch
- Uninterruptible power supply
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 130
130 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.3183$ 0.3024 | $ 1.51 |
| 50+ | $ 0.2549$ 0.2422 | $ 12.11 |
| 150+ | $ 0.2278$ 0.2165 | $ 32.48 |
| 500+ | $ 0.1939$ 0.1843 | $ 92.15 |
| 2,500+ | $ 0.1788$ 0.1699 | $ 424.75 |
| 5,000+ | $ 0.1697$ 0.1613 | $ 806.50 |
Standardowa Obudowa2500/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | TO-252-2L(DPAK) | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 34.7W | |
| RDS(on) | 80mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.535nF | |
| Gate Charge(Qg) | 26.2nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | TO-252-2L(DPAK) | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 34.7W | |
| RDS(on) | 80mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.535nF | |
| Gate Charge(Qg) | 26.2nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The HDMN10H100SK313 utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Funkcje
Tłumaczenie AI
- Drain-Source Voltage (VDS) = 100V, Drain Current (ID) = 20A
- On-State Resistance (RDS(ON)) < 87mΩ at Gate-Source Voltage (VGS) = 10V
Zastosowania
Tłumaczenie AI
- Battery protection
- Load switch
- Uninterruptible power supply
C42401431 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| NTD6416ANT4G-HXY | HXY MOSFET | Podobne | TO-252 | 125 | $0.1915 $0.2127 | ||
| AUIRLR3410-HXY | HXY MOSFET | Podobne | TO-252-2L | 1,805 | $0.2282 $0.2402 | ||
| IRFR3910PBF-HXY | HXY MOSFET | Podobne | TO-252-2L | 185 | $0.2350 $0.2473 | ||
| IRLR3410PBF-HXY | HXY MOSFET | Podobne | TO-252-2L | 165 | $0.2315 $0.2436 | ||
| HXY20N10D | HXY MOSFET | Podobne | TO-252-2L | 500 | $0.1826 $0.1922 |
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