HXY MOSFET HFFSH10120A
| Producent | HXY MOSFETAsian Brands |
| Nr części prod. | HFFSH10120A |
| Nr LCSC | C42389244 |
| Opak. | TO-247-2L |
| Numer Klienta | |
| Klucz. cechy | Silicon Carbide Schottky Diode |
| Karta Katalogowa | HXY MOSFET HFFSH10120A |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | HXY MOSFET | |
| Opak. | TO-247-2L | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 1.2kV | |
| Voltage - Forward(Vf@If) | 1.8V@10A | |
| Reverse Leakage Current (Ir) | 250uA@1200V | |
| Current - Rectified | 31.5A | |
| Non-Repetitive Peak Forward Surge Current | 750A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | HXY MOSFET | |
| Opak. | TO-247-2L | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Typ | Opis | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 1.2kV | |
| Voltage - Forward(Vf@If) | 1.8V@10A | |
| Reverse Leakage Current (Ir) | 250uA@1200V | |
| Current - Rectified | 31.5A | |
| Non-Repetitive Peak Forward Surge Current | 750A |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This product can replace bipolar rectifiers, achieving essentially zero switching losses, thereby improving efficiency, reducing heatsink requirements, and allowing devices to be connected in parallel without thermal runaway.
Funkcje
Tłumaczenie AI
- 1.2 kV Schottky rectifier
- Zero reverse recovery current
- High-frequency operation
- Temperature-independent switching characteristics
- Extremely fast switching speed
- Positive temperature coefficient of forward voltage VF
- Increased creepage/clearance distance
Zastosowania
Tłumaczenie AI
- Switching power supplies
- Boost diode in power factor correction or DC-DC conversion stages
- Freewheeling diode in inverter stages
- AC-DC converters
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 10
10 W magazynie, wysyłka natychmiastowa
Niezalecane do nowych projektów
Po wyczerpaniu zapasów produkt zostanie oznaczony jako „Niedostępny”.
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 3.6218$ 1.8109 | $ 1.81 |
| 10+ | $ 3.0967$ 1.5484 | $ 15.48 |
| 30+ | $ 2.784$ 1.3920 | $ 41.76 |
| 90+ | $ 2.468$ 1.2340 | $ 111.06 |
| 510+ | $ 2.3222$ 1.1611 | $ 592.16 |
| 990+ | $ 2.2574$ 1.1287 | $ 1117.41 |
Standardowa Obudowa30/Full Tube | ||
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | HXY MOSFET | |
| Opak. | TO-247-2L | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 1.2kV | |
| Voltage - Forward(Vf@If) | 1.8V@10A | |
| Reverse Leakage Current (Ir) | 250uA@1200V | |
| Current - Rectified | 31.5A | |
| Non-Repetitive Peak Forward Surge Current | 750A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | HXY MOSFET | |
| Opak. | TO-247-2L | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Typ | Opis | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 1.2kV | |
| Voltage - Forward(Vf@If) | 1.8V@10A | |
| Reverse Leakage Current (Ir) | 250uA@1200V | |
| Current - Rectified | 31.5A | |
| Non-Repetitive Peak Forward Surge Current | 750A |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This product can replace bipolar rectifiers, achieving essentially zero switching losses, thereby improving efficiency, reducing heatsink requirements, and allowing devices to be connected in parallel without thermal runaway.
Funkcje
Tłumaczenie AI
- 1.2 kV Schottky rectifier
- Zero reverse recovery current
- High-frequency operation
- Temperature-independent switching characteristics
- Extremely fast switching speed
- Positive temperature coefficient of forward voltage VF
- Increased creepage/clearance distance
Zastosowania
Tłumaczenie AI
- Switching power supplies
- Boost diode in power factor correction or DC-DC conversion stages
- Freewheeling diode in inverter stages
- AC-DC converters
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Szczegóły |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| HC4D10120H | HXY MOSFET | Podobne | TO-247-2L | 18 | $1.8356 $1.9322 | ||
| HIDWD40G120C5 | HXY MOSFET | Podobne | TO-247-2L | 30 | $6.8676 $7.804 | ||
| HIDWD20G120C5XKSA1 | HXY MOSFET | Podobne | TO-247-2L | 26 | $ 3.9807 | ||
| HC4D40120H | HXY MOSFET | Podobne | TO-247-2L | 45 | $6.5799 $6.9262 | ||
| HC4D20120H | HXY MOSFET | Podobne | TO-247-2L | 60 | $ 2.6822 |



