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VBsemi Elec AP92U03GS-HF-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | AP92U03GS-HF-VB |
| LCSC-Nr. | C41370042 |
| Verp. | TO-263(D2PAK) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 98A TO-263(D2PAK) |
| Datenblatt | VBsemi Elec AP92U03GS-HF-VB |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.725nF | |
| Current - Continuous Drain(Id) | 98A | |
| Ciss-Input Capacitance | 12.065nF | |
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss) | 970pF | |
| RDS(on) | 2.7mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 257nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.725nF | |
| Current - Continuous Drain(Id) | 98A | |
| Ciss-Input Capacitance | 12.065nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss) | 970pF | |
| RDS(on) | 2.7mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 257nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Trench Power MOS FET
- 100 % Rg and UIS Tested
- Compliant to RoHS Directive 2011/65/EU
Anwendungen
KI-Übersetzung
- OR-ing
- Server DC/DC
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 10
10 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.0959$ 0.9316 | $ 0.93 |
| 10+ | $ 0.938$ 0.7973 | $ 7.97 |
| 50+ | $ 0.8606$ 0.7316 | $ 36.58 |
| 100+ | $ 0.5266$ 0.4477 | $ 44.77 |
| 500+ | $ 0.4789$ 0.4071 | $ 203.55 |
| 1,000+ | $ 0.4558$ 0.3875 | $ 387.50 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.725nF | |
| Current - Continuous Drain(Id) | 98A | |
| Ciss-Input Capacitance | 12.065nF | |
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss) | 970pF | |
| RDS(on) | 2.7mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 257nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.725nF | |
| Current - Continuous Drain(Id) | 98A | |
| Ciss-Input Capacitance | 12.065nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss) | 970pF | |
| RDS(on) | 2.7mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 257nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Trench Power MOS FET
- 100 % Rg and UIS Tested
- Compliant to RoHS Directive 2011/65/EU
Anwendungen
KI-Übersetzung
- OR-ing
- Server DC/DC
C41370042 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| IRF3709SPBF-VB | VBsemi Elec | Ähnliche | TO-263(D2PAK) | 2 | $ 0.778 | ||
| IPB080N03L G-VB | VBsemi Elec | Ähnliche | TO-263(D2PAK) | 7 | $0.6755 $0.7947 | ||
| SUB75N03-04-VB | VBsemi Elec | Ähnliche | TO-263(D2PAK) | 20 | $0.6613 $0.778 | ||
| IRL8113SPBF-VB | VBsemi Elec | Ähnliche | TO-263(D2PAK) | 10 | $0.6613 $0.778 | ||
| STB80NE03L-06T4-VB | VBsemi Elec | Ähnliche | TO-263(D2PAK) | 10 | $0.6613 $0.778 |