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EDA-ModelleEasyEDA
TOSHIBA TK100E08N1,S1X(S
| Hersteller | |
| Herst.-Teilenr. | TK100E08N1,S1X(S |
| LCSC-Nr. | C396033 |
| Verp. | TO-220 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 80V 214A TO-220 |
| Datenblatt | TOSHIBA TK100E08N1,S1X(S |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 2.1nF | |
| Pd - Power Dissipation | 255W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 214A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 130nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 2.1nF | |
| Pd - Power Dissipation | 255W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 214A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 130nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low drain-source on-resistance: RDS(ON)=2.6 mΩ (typ.) (VGS=10 V)
- Low leakage current: ΔlDSS=10 μA (max) (VDS=80 V)
- Enhancement mode: Vth=2.0 to 4.0 V (ΔVDS=10 V, ID=1.0 mA)
Anwendungen
KI-Übersetzung
- Switching Voltage Regulators
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 2,334
2,334 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.2449 | $ 1.24 |
| 10+ | $ 1.0199 | $ 10.20 |
| 50+ | $ 0.8951 | $ 44.76 |
| 100+ | $ 0.7555 | $ 75.55 |
| 500+ | $ 0.6931 | $ 346.55 |
| 1,000+ | $ 0.6652 | $ 665.20 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 2.1nF | |
| Pd - Power Dissipation | 255W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 214A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 130nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 2.1nF | |
| Pd - Power Dissipation | 255W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 214A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 130nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low drain-source on-resistance: RDS(ON)=2.6 mΩ (typ.) (VGS=10 V)
- Low leakage current: ΔlDSS=10 μA (max) (VDS=80 V)
- Enhancement mode: Vth=2.0 to 4.0 V (ΔVDS=10 V, ID=1.0 mA)
Anwendungen
KI-Übersetzung
- Switching Voltage Regulators
C396033 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| SP80N03AHTQ | Siliup | Ähnliche | TO-220-3L | 688 | $0.5409 $0.7726 | ||
| SP85N02BGHTQ | Siliup | Ähnliche | TO-220-3L | 217 | $1.0894 $1.2104 | ||
| SP85N01BGHTQ | Siliup | Ähnliche | TO-220-3L | 190 | $1.3467 $1.4963 | ||
| TK100E10N1,S1X(S | TOSHIBA | Ähnliche | TO-220 | 1,961 | $ 1.6208 | ||
| FDP032N08B-F102 | onsemi | Ähnliche | TO-220 | 779 | $ 2.6385 |
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