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PANJIT BSS8402DW_R1_00001
| Produttore | PANJITAsian Brands |
| Cod. Prod. | BSS8402DW_R1_00001 |
| Cod. LCSC | C391435 |
| Imballo | SOT-363 |
| Numero Cliente | |
| Attr. chiave | 200mW 60V 130mA 7Ω@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOT-363 Single FETs, MOSFETs |
| Scheda Tecnica | PANJIT BSS8402DW_R1_00001 |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | PANJIT | |
| Imballo | SOT-363 | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 130mA | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel + P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | PANJIT | |
| Imballo | SOT-363 | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 130mA | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel + P-Channel |
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Descrizione
Traduzione AI
This space-saving device contains a complementary pair of electrically isolated enhancement-mode MOSFETs (one N-channel and one P-channel). It is housed in the very small SOT-363 package. The device is ideal for portable applications where board space is at a premium.
Caratteristiche
Traduzione AI
- Complementary pair
- Low on-resistance
- Low gate threshold voltage
- Fast switching
- Lead-free products compliant with EU RoHS Directive 2011/65/EU
- Green molding compound (halogen-free) compliant with IEC61249
Applicazioni
Traduzione AI
- Switching power supplies
- Handheld computers, personal digital assistants (PDA)
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Esaurito
Avvisami
Minimo: 10Multiplo: 10Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 10+ | $ 0.0447 | $ 0.45 |
| 100+ | $ 0.044 | $ 4.40 |
| 300+ | $ 0.0435 | $ 13.05 |
| 1,000+ | $ 0.043 | $ 43.00 |
Package Standard3000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | PANJIT | |
| Imballo | SOT-363 | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 130mA | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel + P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | PANJIT | |
| Imballo | SOT-363 | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 130mA | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel + P-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This space-saving device contains a complementary pair of electrically isolated enhancement-mode MOSFETs (one N-channel and one P-channel). It is housed in the very small SOT-363 package. The device is ideal for portable applications where board space is at a premium.
Caratteristiche
Traduzione AI
- Complementary pair
- Low on-resistance
- Low gate threshold voltage
- Fast switching
- Lead-free products compliant with EU RoHS Directive 2011/65/EU
- Green molding compound (halogen-free) compliant with IEC61249
Applicazioni
Traduzione AI
- Switching power supplies
- Handheld computers, personal digital assistants (PDA)
C391435 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| BSS8402DW-7-F | DIODES | Simili | SOT-363 | 8,845 | $ 0.3376 | ||
| HSSK8402 | HUASHUO | Simili | SOT-363 | 50 | $ 0.0877 | ||
| BSS8402DWQ-7 | DIODES | Simili | SOT-363 | 35 | $ 0.3307 | ||
| CJ7252KDW | JSCJ | Simili | SOT-363 | 3,395 | $ 0.0915 | ||
| BSS8402DWQ-13 | DIODES | Simili | SOT-363 | 0 | $ 0.3354 |