Infineon TLE4926CHTNE6747HAMA1

Power semiconductors play a critical role in renewable energy generation. In wind turbines, power semiconductors are used to convert power and connect generators to the grid. They are also integrated into various auxiliary drives — such as yaw drives, pitch drives, and pumps — as well as protection circuits such as crowbar circuits.

Wind power converters control many important functions and applications, requiring power semiconductors that meet the highest quality standards. This is especially true for offshore wind converters, which operate in harsh environments exposed to salt, humidity, and other elements. The offshore market is expected to grow rapidly.

Wind turbine generators must also be designed to deliver the highest level of availability to contribute to grid stability. This applies not only to converters but also to the various auxiliary drives installed at different locations. Grid stability therefore depends on power semiconductor components with dynamic capability, outstanding functionality, and superior reliability.

Fixed-speed designs are suitable for generators up to 400 kW. New designs are typically based on semiconductor solutions to meet grid code requirements. Infineon offers a complete range of grid-coupling components, with thyristors and other bipolar semiconductors available in module, disc, and stack configurations.

The doubly-fed induction generator (DFIG) — a variable-speed design — is commonly used in the 400 kW to 2500 kW power range. To control full load, only up to one-third of the energy needs to be converted in both directions via power semiconductors. Infineon's IGBTs support optimum performance even at the limits of the operating range. High-quality design, low voltage ride-through (LVRT) capability, and very low output frequency meet high-availability requirements.

Full converters for permanent magnet (PM) generators offer maximum flexibility for low-, medium-, and high-speed generators to meet LVRT and other grid stability requirements. High efficiency is essential; active front-end inverters can accommodate variable power and frequency. This design reduces the use of inductive components. Infineon's IGBTs enable modular and scalable system design.

Electrically excited (EE) generators power inverters through bipolar rectifiers, with generator voltage controlled by excitation. The grid inverter is controlled by IGBTs as a function of excitation. This design is a proven solution successfully deployed in modern systems.

Crowbar circuits, choppers, and active filters are essential elements in wind turbine design. Although these components are not directly involved in energy feed-in, they are necessary for managing external influences and meeting grid stability requirements.

Wind turbine designs require multiple drives for safe and proper operation. Yaw drives, pitch drives, and pumps can be controlled by small inverters. The DC bus in pitch control drives must be connected to an energy storage solution to enable emergency shutdown.

Our TRENCHSTOP™ IGBTs utilize a trench gate and field-stop concept that significantly improves both static and dynamic losses in IGBT design. This performance enhancement makes our power switches more efficient, with a 50% increase in power density. Furthermore, our zero-defect strategy, combined with the experience of producing more than one million TRENCHSTOP™ IGBT wafers to date, provides the best assurance of the lowest failure rates and highest reliability.

We have a globally experienced team of application engineers who provide customers with advanced and cost-effective reference solutions and design support, accelerating and shortening their time to market.

We embed environmental sustainability into our daily business and strategy. We continuously reduce our environmental footprint. We enable energy-efficient end products and applications. We drive a sustainable society by delivering a net environmental benefit.

Our ModSTACK™ HD series is a complete power electronics switching assembly incorporating our standard PrimePACK™ high-power IGBT half-bridge modules. The series supports nominal chip currents from 1000 A to 3000 A at 1700 V. The standard switching assembly is equipped with all necessary components for current, voltage, and temperature measurement. Features include monitoring functions for self-protection and a liquid-cooled heatsink for optimized thermal management. The vertically arranged AC power terminals are mechanically decoupled from the module's power terminals, providing customers with maximum flexibility when connecting to power bus systems.

• Industry-leading maximum junction temperature of 150°C
• Enhanced performance with lower electrical losses
• Highest quality and reliability IGBT power modules
• Maximum power density with PrimePACK™ IGBT4 modules
• Broad product portfolio supporting all applications
• Compatible with standard cabinet frame dimensions
• High reliability and robust design
• Parallel operation capable