Abbildung ähnlich
EDA-ModelleEasyEDA
Infineon SPB03N60C3
| Hersteller | |
| Herst.-Teilenr. | SPB03N60C3 |
| LCSC-Nr. | C3279196 |
| Verp. | TO-263 |
| Kundennummer | |
| Hauptmerkm. | 700V 3.2A 38W 1.4Ω@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS |
| Datenblatt | Infineon SPB03N60C3 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 150pF | |
| Current - Continuous Drain(Id) | 3.2A | |
| Ciss-Input Capacitance | 400pF | |
| Pd - Power Dissipation | 38W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 1.4Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 150pF | |
| Current - Continuous Drain(Id) | 3.2A |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 400pF | |
| Pd - Power Dissipation | 38W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 1.4Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
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Merkmale
KI-Übersetzung
- Revolutionary new high-voltage technology
- Ultra-low gate charge
- Repetitive avalanche rated
- Extremely high dv/dt rated
- High peak current capability
- Improved transconductance
- JEDEC standard compliant for target applications
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.4861 | $ 0.49 |
| 200+ | $ 0.1883 | $ 37.66 |
| 500+ | $ 0.1821 | $ 91.05 |
| 1,000+ | $ 0.179 | $ 179.00 |
Standardgehäuse1000/Full Bag | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 150pF | |
| Current - Continuous Drain(Id) | 3.2A | |
| Ciss-Input Capacitance | 400pF | |
| Pd - Power Dissipation | 38W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 1.4Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 150pF | |
| Current - Continuous Drain(Id) | 3.2A |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 400pF | |
| Pd - Power Dissipation | 38W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 1.4Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Revolutionary new high-voltage technology
- Ultra-low gate charge
- Repetitive avalanche rated
- Extremely high dv/dt rated
- High peak current capability
- Improved transconductance
- JEDEC standard compliant for target applications
C3279196 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| SIHB5N80AE-GE3 | VISHAY | Ähnliche | D2PAK(TO-263) | 200 | $ 1.6598 | ||
| RS9N90S | REASUNOS | Ähnliche | TO-263 | 133 | $0.7795 $0.8205 | ||
| VBL18R07S | VBsemi Elec | Ähnliche | TO-263(D2PAK) | 5 | $2.6819 $3.1551 | ||
| STB6N80K5 | ST | Ähnliche | D2PAK | 10 | $ 1.7941 | ||
| SIHB17N80AE-GE3 | VISHAY | Ähnliche | D2PAK(TO-263) | 10 | $ 2.9455 |