Infineon IPT60R105CFD7XTMA1
| Produttore | |
| Cod. Prod. | IPT60R105CFD7XTMA1 |
| Cod. LCSC | C3278552 |
| Imballo | HSOF-8 |
| Numero Cliente | |
| Attr. chiave | 600V CoolMOS CFD7 Power Transistor, Current:15A, Voltage:650V |
| Scheda Tecnica | Infineon IPT60R105CFD7XTMA1 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | HSOF-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 28pF | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 519pF | |
| RDS(on) | 105mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.504nF | |
| Gate Charge(Qg) | 36nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | HSOF-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 28pF | |
| Current - Continuous Drain(Id) | 24A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 519pF | |
| RDS(on) | 105mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.504nF | |
| Gate Charge(Qg) | 36nC@10V |
Descrizione
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The latest CoolMOS CFD7, successor to the CoolMOS CFD2 series, is a platform specifically optimized for soft-switching applications such as phase-shifted full-bridge (ZVS) and LLC. With reduced gate charge (Qg), best-in-class reverse recovery charge (Qrr), and improved turn-off characteristics, CoolMOS CFD7 achieves the highest efficiency in resonant topologies. As part of Infineon's fast body diode portfolio, this new product family combines all the advantages of fast switching technology with excellent hard-commutation robustness, without compromising ease of implementation during design-in.
Caratteristiche
- Ultra-fast body diode
- Low gate charge
- Best-in-class reverse recovery charge (Qrr)
- Improved dv/dt and diF/dt ruggedness of MOSFET body diode
- Lowest figure-of-merit RDS(on) * Qg and RDS(on) * Eoss
- Best-in-class RDS(on) in SMD and THD packages
Applicazioni
- Soft-switching topology
- Phase-shifted full-bridge (ZVS), LLC applications - Servers
- Telecom
- EV charging
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 4.757 | $ 4.76 |
| 200+ | $ 1.8424 | $ 368.48 |
| 500+ | $ 1.7776 | $ 888.80 |
| 1,000+ | $ 1.7452 | $ 1745.20 |
Package Standard2000/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | HSOF-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 28pF | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 519pF | |
| RDS(on) | 105mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.504nF | |
| Gate Charge(Qg) | 36nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | HSOF-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 28pF | |
| Current - Continuous Drain(Id) | 24A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 519pF | |
| RDS(on) | 105mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.504nF | |
| Gate Charge(Qg) | 36nC@10V |
Descrizione
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The latest CoolMOS CFD7, successor to the CoolMOS CFD2 series, is a platform specifically optimized for soft-switching applications such as phase-shifted full-bridge (ZVS) and LLC. With reduced gate charge (Qg), best-in-class reverse recovery charge (Qrr), and improved turn-off characteristics, CoolMOS CFD7 achieves the highest efficiency in resonant topologies. As part of Infineon's fast body diode portfolio, this new product family combines all the advantages of fast switching technology with excellent hard-commutation robustness, without compromising ease of implementation during design-in.
Caratteristiche
- Ultra-fast body diode
- Low gate charge
- Best-in-class reverse recovery charge (Qrr)
- Improved dv/dt and diF/dt ruggedness of MOSFET body diode
- Lowest figure-of-merit RDS(on) * Qg and RDS(on) * Eoss
- Best-in-class RDS(on) in SMD and THD packages
Applicazioni
- Soft-switching topology
- Phase-shifted full-bridge (ZVS), LLC applications - Servers
- Telecom
- EV charging
C3278552 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
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