VISHAY SIHB105N60EF-GE3
| Hersteller | |
| Herst.-Teilenr. | SIHB105N60EF-GE3 |
| LCSC-Nr. | C3277589 |
| Verp. | D2PAK(TO-263) |
| Kundennummer | |
| Hauptmerkm. | N-Channel MOSFET, Current: 19A, Voltage: 600V |
| Datenblatt | VISHAY SIHB105N60EF-GE3 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 82pF | |
| Current - Continuous Drain(Id) | 29A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 102mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.804nF | |
| Gate Charge(Qg) | 53nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 82pF | |
| Current - Continuous Drain(Id) | 29A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 102mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.804nF | |
| Gate Charge(Qg) | 53nC@10V | |
| Type | N-Channel |
Beschreibung
The HUF75321 N-channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per unit silicon area, delivering outstanding performance. The device can withstand high energy in avalanche mode, and the diode features extremely short reverse recovery time and low stored charge. It is specifically designed for applications demanding high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.
Merkmale
- 4th Generation E-Series Technology
- Low Figure of Merit (FOM) Ron × QG
- Low Effective Capacitance (Co(er))
- Reduced Switching and Conduction Losses
- Avalanche Energy Rated (UIS)
- Material Category: For compliance definitions, see www.vishay.com/doc?99912
- RoHS Compliant
- Halogen Free
Anwendungen
- Server and telecom power supplies
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) supplies
- Lighting
- High Intensity Discharge (HID) lamps
- Fluorescent ballast lighting
- Industrial applications
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (photovoltaic inverters)
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.6366 | $ 2.64 |
| 200+ | $ 1.0216 | $ 204.32 |
| 500+ | $ 0.9843 | $ 492.15 |
| 1,000+ | $ 0.9681 | $ 968.10 |
Standardgehäuse50/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 82pF | |
| Current - Continuous Drain(Id) | 29A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 102mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.804nF | |
| Gate Charge(Qg) | 53nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 82pF | |
| Current - Continuous Drain(Id) | 29A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 208W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 102mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.804nF | |
| Gate Charge(Qg) | 53nC@10V | |
| Type | N-Channel |
Beschreibung
The HUF75321 N-channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per unit silicon area, delivering outstanding performance. The device can withstand high energy in avalanche mode, and the diode features extremely short reverse recovery time and low stored charge. It is specifically designed for applications demanding high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.
Merkmale
- 4th Generation E-Series Technology
- Low Figure of Merit (FOM) Ron × QG
- Low Effective Capacitance (Co(er))
- Reduced Switching and Conduction Losses
- Avalanche Energy Rated (UIS)
- Material Category: For compliance definitions, see www.vishay.com/doc?99912
- RoHS Compliant
- Halogen Free
Anwendungen
- Server and telecom power supplies
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) supplies
- Lighting
- High Intensity Discharge (HID) lamps
- Fluorescent ballast lighting
- Industrial applications
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (photovoltaic inverters)
C3277589 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| CMB65R105 | Cmos | TO-263 | 40 | $2.0116 $2.1174 | ||
| ASB65R120EFD | ANHI | TO-263 | 541 | $ 1.5434 | ||
| NVB110N65S3F | onsemi | D2PAK | 26 | $4.5006 $5.77 | ||
| STB34NM60ND | ST | TO-263 | 943 | $ 3.2542 | ||
| STB36N60M6 | ST | TO-263 | 0 | $ 7.1094 | ||
| STB38N65M5 | ST | D2PAK | 0 | $ 10.8395 | ||
| VBL165R36S | VBsemi Elec | TO-263 | 0 | $ 7.0058 | ||
| STB34N65M5 | ST | D2PAK | 0 | $ 11.0995 | ||
| IXFA34N65X2-TRL | Littelfuse/IXYS | TO-263(D2Pak) | 0 | $ 4.9233 | ||
| IXTA34N65X2-TRL | Littelfuse/IXYS | TO-263(D2Pak) | 0 | $ 4.9777 |