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TI TPIC1301DW

제조업체
제조사 품번
TPIC1301DW
LCSC 번호
C3276322
포장
-
고객 번호
주요 제원
3 Half-Bridges, Current: 11.25A, Voltage: 60V
데이터시트TI TPIC1301DW
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제품 사양

전체
타입설명
카테고리Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체TI
포장-
Drain to Source Voltage60V
Operating Temperature-40℃~+125℃
Current - Continuous Drain(Id)2.25A
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation1.39W
RDS(on)275mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)75pF
Input Capacitance(Ciss)250pF
Gate Charge(Qg)7.4nC@10V
TypeN-Channel
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개요

AI 번역

TPIC1301 is a monolithic gate-protected power DMOS array comprising six electrically isolated N-channel enhancement-mode DMOS transistors configured as three half H-bridges. Each transistor integrates high-current Zener diodes (ZCXa and ZCXb) to protect the gate from damage under overstress conditions. When tested using the human body model (100 pF capacitor in series with 1.5 kΩ resistor), these Zener diodes also provide ESD protection up to 4000 V. The TPIC1301 is available in a 24-pin wide-body surface-mount (DW) package and is characterized for operation over a case temperature range of -40°C to 125°C.

주요 특징

AI 번역
  • Low rDS(on)......typical 0.23 Ω
  • High voltage output......60 V
  • Enhanced ESD capability......4000 V
  • Pulse current......11.25 A per channel
  • Fast commutation speed