TI CA3096CM
| Hersteller | |
| Herst.-Teilenr. | CA3096CM |
| LCSC-Nr. | C3199598 |
| Verp. | SOIC-16 |
| Kundennummer | |
| Hauptmerkm. | 100 24V 200mW NPN+PNP SOIC-16 Bipolar Transistor Arrays |
| Datenblatt | TI CA3096CM |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Hersteller | TI | |
| Verp. | SOIC-16 | |
| Current - Collector Cutoff | 1uA | |
| DC Current Gain | 100 | |
| Collector - Emitter Voltage VCEO | 24V | |
| Pd - Power Dissipation | 200mW | |
| Emitter-Base Voltage VEBO | 6V;40V | |
| Configuration | Standalone | |
| Transition frequency(fT) | 335MHz;6.8MHz | |
| type | NPN+PNP | |
| Vce Saturation(VCE(sat)) | 700mV | |
| Number | 3 NPN + 2 PNP | |
| Current - Collector(Ic) | 50mA;10mA | |
| Operating Temperature | -55℃~+125℃ |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Hersteller | TI | |
| Verp. | SOIC-16 | |
| Current - Collector Cutoff | 1uA | |
| DC Current Gain | 100 | |
| Collector - Emitter Voltage VCEO | 24V | |
| Pd - Power Dissipation | 200mW | |
| Emitter-Base Voltage VEBO | 6V;40V |
| Typ | Beschreibung | |
|---|---|---|
| Configuration | Standalone | |
| Transition frequency(fT) | 335MHz;6.8MHz | |
| type | NPN+PNP | |
| Vce Saturation(VCE(sat)) | 700mV | |
| Number | 3 NPN + 2 PNP | |
| Current - Collector(Ic) | 50mA;10mA | |
| Operating Temperature | -55℃~+125℃ |
Beschreibung
CA3096C, CA3096, and CA3096A are general-purpose high-voltage silicon transistor arrays. Each array consists of five independent transistors (two PNP and three NPN) on a common substrate with a separate substrate connection. Individual access to each transistor provides maximum flexibility in circuit design. CA3096A, CA3096, and CA3096C are essentially identical, except that the CA3096A specifications include parameter matching and impose tighter requirements for ICBO, ICEO, and VCE(SAT). The CA3096C is a relaxed version of the CA3096. CA3096C, CA3096, and CA3096A are available in 16-lead DIP plastic packages (suffix E) and 16-lead small outline packages (suffix M). The CA3096 is also available in die form (suffix H). CAUTION: These devices are sensitive to electrostatic discharge; proper IC handling procedures must be followed.
Anwendungen
- Five independent transistors (three NPN and two PNP)
- Differential amplifiers
- DC amplifiers
- Sense amplifiers
- Level shifters
- Timers
- Lamp and relay drivers
- Thyristor trigger circuits
- Temperature-compensated amplifiers
- Operational amplifiers
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.8863 | $ 1.89 |
| 200+ | $ 0.7301 | $ 146.02 |
| 500+ | $ 0.7053 | $ 352.65 |
| 1,000+ | $ 0.6929 | $ 692.90 |
Standardgehäuse2500/Full Reel | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Hersteller | TI | |
| Verp. | SOIC-16 | |
| Current - Collector Cutoff | 1uA | |
| DC Current Gain | 100 | |
| Collector - Emitter Voltage VCEO | 24V | |
| Pd - Power Dissipation | 200mW | |
| Emitter-Base Voltage VEBO | 6V;40V | |
| Configuration | Standalone | |
| Transition frequency(fT) | 335MHz;6.8MHz | |
| type | NPN+PNP | |
| Vce Saturation(VCE(sat)) | 700mV | |
| Number | 3 NPN + 2 PNP | |
| Current - Collector(Ic) | 50mA;10mA | |
| Operating Temperature | -55℃~+125℃ |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Hersteller | TI | |
| Verp. | SOIC-16 | |
| Current - Collector Cutoff | 1uA | |
| DC Current Gain | 100 | |
| Collector - Emitter Voltage VCEO | 24V | |
| Pd - Power Dissipation | 200mW | |
| Emitter-Base Voltage VEBO | 6V;40V |
| Typ | Beschreibung | |
|---|---|---|
| Configuration | Standalone | |
| Transition frequency(fT) | 335MHz;6.8MHz | |
| type | NPN+PNP | |
| Vce Saturation(VCE(sat)) | 700mV | |
| Number | 3 NPN + 2 PNP | |
| Current - Collector(Ic) | 50mA;10mA | |
| Operating Temperature | -55℃~+125℃ |
Beschreibung
CA3096C, CA3096, and CA3096A are general-purpose high-voltage silicon transistor arrays. Each array consists of five independent transistors (two PNP and three NPN) on a common substrate with a separate substrate connection. Individual access to each transistor provides maximum flexibility in circuit design. CA3096A, CA3096, and CA3096C are essentially identical, except that the CA3096A specifications include parameter matching and impose tighter requirements for ICBO, ICEO, and VCE(SAT). The CA3096C is a relaxed version of the CA3096. CA3096C, CA3096, and CA3096A are available in 16-lead DIP plastic packages (suffix E) and 16-lead small outline packages (suffix M). The CA3096 is also available in die form (suffix H). CAUTION: These devices are sensitive to electrostatic discharge; proper IC handling procedures must be followed.
Anwendungen
- Five independent transistors (three NPN and two PNP)
- Differential amplifiers
- DC amplifiers
- Sense amplifiers
- Level shifters
- Timers
- Lamp and relay drivers
- Thyristor trigger circuits
- Temperature-compensated amplifiers
- Operational amplifiers
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

