VBsemi Elec LP4101LT1G-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | LP4101LT1G-VB |
| LCSC-Nr. | C3040317 |
| Verp. | SOT-23(TO-236) |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 20V 4A SOT-23(TO-236) |
| Datenblatt | VBsemi Elec LP4101LT1G-VB |
| Alternativteile | 20 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 835pF | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 835pF | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% gate resistance (Rg) tested
- Compliant with RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Load switch
- Power amplifier (PA) switch
- DC/DC converter
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 2,310
2,310 Ab Lager, sofort versandfertig
Minimum: 10Vielfaches: 10Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 10+ | $ 0.0678$ 0.0577 | $ 0.58 |
| 100+ | $ 0.0541$ 0.0460 | $ 4.60 |
| 300+ | $ 0.0473$ 0.0403 | $ 12.09 |
| 3,000+ | $ 0.0422$ 0.0359 | $ 107.70 |
| 6,000+ | $ 0.038$ 0.0323 | $ 193.80 |
| 9,000+ | $ 0.036$ 0.0306 | $ 275.40 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 835pF | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 835pF | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% gate resistance (Rg) tested
- Compliant with RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Load switch
- Power amplifier (PA) switch
- DC/DC converter
C3040317 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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|---|---|---|---|---|---|---|
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| SI2301BDS-T1-GE3-VB | VBsemi Elec | SOT-23(TO-236) | 130 | $0.0829 $0.0872 | ||
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| SI2321DS-T1-GE3-VB | VBsemi Elec | SOT-23(TO-236) | 50 | $0.0557 $0.0655 | ||
| DMP2215L-7-VB | VBsemi Elec | SOT-23(TO-236) | 50 | $0.0601 $0.0706 | ||
| PMV65XP,215-VB | VBsemi Elec | SOT-23 | 50 | $0.0893 $0.094 | ||
| UT2301G-AE3-R-VB | VBsemi Elec | SOT-23(TO-236) | 30 | $0.0609 $0.0641 | ||
| NTR1P02T1G-VB | VBsemi Elec | SOT-23(TO-236) | 20 | $0.0596 $0.0701 | ||
| SI2333DDS-T1-GE3-VB | VBsemi Elec | SOT-23(TO-236) | 10 | $0.0923 $0.1085 | ||
| Si2399DS-T1-GE3-VB | VBsemi Elec | SOT-23(TO-236) | 5 | $0.0826 $0.0869 | ||
| AP2301GN-HF-VB | VBsemi Elec | SOT-23(TO-236) | 5 | $0.0651 $0.0765 | ||
| AM2337P-T1-PF-VB | VBsemi Elec | SOT-23(TO-236) | 0 | $0.0827 $0.087 |



