Infineon/CYPRESS CY27C256T-55ZI

The CY27C256 is a high-performance 32768-word × 8-bit CMOS EPROM. When disabled (CE high), the CY27C256 automatically enters a low-power standby mode. The CY27C256 is available in industry-standard 600-mil DIP, PLCC, and TSOP packages. The CY27C256 is also offered in a CerDIP package with an erase window for reprogrammability. When exposed to ultraviolet light, the EPROM is erased and can be reprogrammed. The memory cells employ proven EPROM floating-gate technology with a byte-wide intelligent programming algorithm. The CY27C256 offers low power consumption, superior performance, and high programming yield. The EPROM cell requires only 12.5V for the superVoltage, and low current requirements allow gang programming. EPROM cells allow 100% testing of each memory location, as every location is written, erased, and toggled prior to packaging. Each EPROM also undergoes AC performance testing to ensure that, after customer programming, the product meets both DC and AC specification limits. To read the CY27C256, valid active-low signals must be applied to OE and CE. The contents of the memory location addressed by the address lines (A₀–A₁₄) will be available on the output lines (O₀–O₇).

• Wide speed range
• 45 ns to 200 ns (commercial)
• Low power consumption
• 248 mW (commercial)
• Low standby power
• Less than 83 mW when deselected
• ±10% supply voltage tolerance