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RENESAS AT25XE161D-SSHN-B

Hersteller
Herst.-Teilenr.
AT25XE161D-SSHN-B
LCSC-Nr.
C29327376
Verp.
SOIC-8
Kundennummer
Hauptmerkm.
16Mbit 1.65V~3.6V 133MHz SPI SOIC-8 Memory RoHS
DatenblattRENESAS AT25XE161D-SSHN-B
RoHS-Konformität1 Dokumente verfügbar
Alternativteile2
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 16
16 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
Stk.E-PreisGesamtbetrag
1+$ 1.6765$ 1.68
10+$ 1.4014$ 14.01
30+$ 1.25$ 37.50
98+$ 1.0801$ 105.85
490+$ 1.0043$ 492.11
980+$ 0.9704$ 950.99
Standardgehäuse98/Full Tube
Besserer Preis bei größerer Menge?
$

Produktspezifikationen

Alle
TypBeschreibung
KategorieIntegrated Circuits (ICs)/Memory/Memory
HerstellerRENESAS
Verp.SOIC-8
Operating Temperature-40℃~+85℃
FeaturesPower-on reset;Hardware write protection;Software write protection
Memory Size16Mbit
Voltage - Supply1.65V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency133MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
InterfaceSPI
Standby Supply Current30uA

Merkmale

KI-Übersetzung
  • Operating voltage range: 1.65 V ~ 3.6 V
  • Compatible with Serial Peripheral Interface
  • Supports SPI modes 0 and 3
  • Supports Dual-Output operation (1-1-2)
  • Supports Quad-Output operation (1-1-4)
  • Supports Quad I/O and Execute-In-Place operations (1-4-4 and 0-4-4)
  • Up to 133 MHz operating frequency
  • Flexible, optimized erase architecture
  • 256-byte page erase
  • 4 KB block erase
  • 32 KB block erase
  • 64 KB block erase
  • Chip erase
  • Flexible programming capability
  • Byte/page programming (1 to 256 bytes)
  • Sequential program mode support
  • Erase/Program Suspend and Resume
  • 1 × 128-byte factory pre-programmed identification register
  • 3 × 128-byte one-time programmable security registers
  • Software-controlled Reset and Terminate commands
  • Multiple memory protection schemes
  • Individual block protection
  • User-configurable protected area at the beginning or end of the memory array (default)
  • Read-Modify-Write command — emulates SRAM write in a single command
  • Active-state interrupt — automatically generates interrupt to host when RDY/BSY bit is cleared
  • Software-controlled Reset and Terminate commands
  • Hardware reset pin option
  • JEDEC hardware reset
  • Non-volatile/volatile status register
  • JEDEC standard manufacturer and device ID
  • Serial Flash Discoverable Parameters
  • Low power:
  • 30 μA standby current (typical)
  • 8.2 μA deep power-down current (typical)
  • 7 nA ultra-deep power-down current (typical)
  • 8.3 mA active read current (1-1-1 — 104 MHz)
  • 10.1 mA program current
  • 10.7 mA erase current
  • User-configurable and automatic I/O pin drive strength levels
  • Endurance: 100,000 program/erase cycles
  • Data retention: 20 years
  • Operating temperature range: -40℃ ~ +85℃
  • Industry-standard green (Pb-free/halogen-free/RoHS compliant) package options
  • 8-pin SOIC (150-mil)
  • 8-pin SOIC (208-mil)
  • 8-pad ultra-thin DFN (2×3×0.6 mm)
  • 8-ball WLCSP (3×2×3 ball array)
  • Die/wafer — contact Renesas for more information

Alternativteile

MPNHerstellerAlternativtypVerpackungVerfügbarkeitStückpreis
AT25XE161D-SSHN-TRENESASÄhnlicheSOIC-80$ 0.5727
AT25FF161A-SHL-TRENESASÄhnlicheSOP-80$ 1.3762
2 weitere Alternativteile.Alle Ersatzprodukte anzeigen