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HUASHUO HSBA4909
| Produttore | HUASHUOAsian Brands |
| Cod. Prod. | HSBA4909 |
| Cod. LCSC | C2903570 |
| Imballo | PRPAK5x6-8L |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH+P-CH ARR 40V 15A PRPAK5x6-8L |
| Scheda Tecnica | HUASHUO HSBA4909 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 3 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HUASHUO | |
| Imballo | PRPAK5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 323pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 36W | |
| RDS(on) | 13mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 222pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 3.5nF | |
| Gate Charge(Qg) | 29nC@4.5V | |
| Type | N-Channel + P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HUASHUO | |
| Imballo | PRPAK5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 323pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 36W | |
| RDS(on) | 13mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 222pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 3.5nF | |
| Gate Charge(Qg) | 29nC@4.5V | |
| Type | N-Channel + P-Channel |
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Descrizione
Traduzione AI
HSBA4909 is a high-performance complementary N-channel and P-channel MOSFET featuring high cell density, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSBA4909 complies with RoHS and green product requirements, is 100% guaranteed for EAS (avalanche energy rating), and has passed full-function reliability qualification.
Caratteristiche
Traduzione AI
- 100% guaranteed EAS
- Green/eco-friendly device options available
- Ultra-low gate charge
- Excellent dV/dt immunity
- Advanced high cell density trench technology
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100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 36
36 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.5453 | $ 0.55 |
| 10+ | $ 0.4378 | $ 4.38 |
| 30+ | $ 0.3923 | $ 11.77 |
| 100+ | $ 0.3353 | $ 33.53 |
| 500+ | $ 0.28 | $ 140.00 |
| 1,000+ | $ 0.2653 | $ 265.30 |
Package Standard3000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HUASHUO | |
| Imballo | PRPAK5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 323pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 36W | |
| RDS(on) | 13mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 222pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 3.5nF | |
| Gate Charge(Qg) | 29nC@4.5V | |
| Type | N-Channel + P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HUASHUO | |
| Imballo | PRPAK5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 323pF | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 36W | |
| RDS(on) | 13mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 222pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 3.5nF | |
| Gate Charge(Qg) | 29nC@4.5V | |
| Type | N-Channel + P-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
HSBA4909 is a high-performance complementary N-channel and P-channel MOSFET featuring high cell density, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSBA4909 complies with RoHS and green product requirements, is 100% guaranteed for EAS (avalanche energy rating), and has passed full-function reliability qualification.
Caratteristiche
Traduzione AI
- 100% guaranteed EAS
- Green/eco-friendly device options available
- Ultra-low gate charge
- Excellent dV/dt immunity
- Advanced high cell density trench technology
C2903570 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| HSBA4903 | HUASHUO | Simili | PRPAK5x6-8L | 1,830 | $ 0.232 | ||
| HSBA1641 | HUASHUO | Simili | PRPAK5x6-8L | 2,860 | $ 0.1348 | ||
| HSBA6901 | HUASHUO | Simili | PRPAK5x6-8L | 2,435 | $ 0.3629 |
3 altri componenti alternativi.Visualizza tutti i sostituti