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TI CSD13380F3
| Produttore | |
| Cod. Prod. | CSD13380F3 |
| Cod. LCSC | C2873036 |
| Imballo | PicoStar-3 |
| Numero Cliente | |
| Attr. chiave | 1.4W 12V 3.6A 135mΩ@1.8V 1 N-channel N-Channel PicoStar-3 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | TI CSD13380F3 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | PicoStar-3 | |
| Output Capacitance(Coss) | 105pF | |
| Ciss-Input Capacitance | 156pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 3.6A | |
| Reverse Transfer Capacitance (Crss) | 12.5pF | |
| RDS(on) | 135mΩ@1.8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.2nC@4.5V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | PicoStar-3 | |
| Output Capacitance(Coss) | 105pF | |
| Ciss-Input Capacitance | 156pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 3.6A | |
| Reverse Transfer Capacitance (Crss) | 12.5pF | |
| RDS(on) | 135mΩ@1.8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.2nC@4.5V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
This 63 mΩ, 12V N-channel FemtoFET MOSFET is designed and optimized to minimize footprint in handheld and mobile applications. The technology enables significant package size reduction as a drop-in replacement for standard small-signal MOSFETs.
Caratteristiche
Traduzione AI
- Low on-resistance
- Ultra-low Qg and Qgd
- High drain operating current
- Ultra-small package: 0.73mm × 0.64mm
- Thin profile: maximum thickness 0.36mm
- Integrated ESD protection diode: rated > 3kV HBM; rated > 2kV CDM
- Lead-free and halogen-free
- RoHS compliant
Applicazioni
Traduzione AI
- Optimized for load switch applications
- Optimized for general-purpose switch applications
- Battery applications
- Handheld and mobile applications
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Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.0328 | $ 0.03 |
| 10+ | $ 0.032 | $ 0.32 |
| 30+ | $ 0.0315 | $ 0.95 |
| 100+ | $ 0.031 | $ 3.10 |
Package Standard3000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | PicoStar-3 | |
| Output Capacitance(Coss) | 105pF | |
| Ciss-Input Capacitance | 156pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 3.6A | |
| Reverse Transfer Capacitance (Crss) | 12.5pF | |
| RDS(on) | 135mΩ@1.8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.2nC@4.5V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | PicoStar-3 | |
| Output Capacitance(Coss) | 105pF | |
| Ciss-Input Capacitance | 156pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 3.6A | |
| Reverse Transfer Capacitance (Crss) | 12.5pF | |
| RDS(on) | 135mΩ@1.8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.2nC@4.5V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This 63 mΩ, 12V N-channel FemtoFET MOSFET is designed and optimized to minimize footprint in handheld and mobile applications. The technology enables significant package size reduction as a drop-in replacement for standard small-signal MOSFETs.
Caratteristiche
Traduzione AI
- Low on-resistance
- Ultra-low Qg and Qgd
- High drain operating current
- Ultra-small package: 0.73mm × 0.64mm
- Thin profile: maximum thickness 0.36mm
- Integrated ESD protection diode: rated > 3kV HBM; rated > 2kV CDM
- Lead-free and halogen-free
- RoHS compliant
Applicazioni
Traduzione AI
- Optimized for load switch applications
- Optimized for general-purpose switch applications
- Battery applications
- Handheld and mobile applications
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| CSD13380F3T | TI | Conf. Alt. | PicoStar-3 | 80 | $ 0.2821 | ||
| CSD13385F5 | TI | Simili | PicoStar-3 | 5 | $ 0.1326 | ||
| CSD17585F5 | TI | Simili | PicoStar-3 | 35 | $ 0.1765 | ||
| CSD13385F5T | TI | Simili | PicoStar-3 | 0 | $ 1.0718 | ||
| CSD17585F5T | TI | Simili | PicoStar-3 | 0 | $ 1.0915 |