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EDA-ModelleEasyEDA
TI CSD16401Q5
| Hersteller | |
| Herst.-Teilenr. | CSD16401Q5 |
| LCSC-Nr. | C2872963 |
| Verp. | SON-8(5x6) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 25V 261A SON-8(5x6) |
| Datenblatt | TI CSD16401Q5 |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | SON-8(5x6) | |
| Output Capacitance(Coss) | 3.3nF | |
| Ciss-Input Capacitance | 4.1nF | |
| Pd - Power Dissipation | 156W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 261A | |
| Reverse Transfer Capacitance (Crss) | 230pF | |
| RDS(on) | 1.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 29nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | SON-8(5x6) | |
| Output Capacitance(Coss) | 3.3nF | |
| Ciss-Input Capacitance | 4.1nF | |
| Pd - Power Dissipation | 156W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 261A | |
| Reverse Transfer Capacitance (Crss) | 230pF | |
| RDS(on) | 1.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 29nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This 25 V, 1.3 mΩ NexFET power MOSFET in a 5 mm × 6 mm SON package is designed to minimize power loss in power conversion applications.
Merkmale
KI-Übersetzung
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- SON 5 mm × 6 mm plastic package
Anwendungen
KI-Übersetzung
- Point-of-load synchronous buck converter for networking, telecom, and computing systems
- Optimized for synchronous FET applications
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 110
110 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.6758 | $ 2.68 |
| 10+ | $ 2.3785 | $ 23.79 |
| 30+ | $ 2.1917 | $ 65.75 |
| 100+ | $ 2.0016 | $ 200.16 |
| 500+ | $ 1.9139 | $ 956.95 |
| 1,000+ | $ 1.8765 | $ 1876.50 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | SON-8(5x6) | |
| Output Capacitance(Coss) | 3.3nF | |
| Ciss-Input Capacitance | 4.1nF | |
| Pd - Power Dissipation | 156W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 261A | |
| Reverse Transfer Capacitance (Crss) | 230pF | |
| RDS(on) | 1.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 29nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | SON-8(5x6) | |
| Output Capacitance(Coss) | 3.3nF | |
| Ciss-Input Capacitance | 4.1nF | |
| Pd - Power Dissipation | 156W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 261A | |
| Reverse Transfer Capacitance (Crss) | 230pF | |
| RDS(on) | 1.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 29nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This 25 V, 1.3 mΩ NexFET power MOSFET in a 5 mm × 6 mm SON package is designed to minimize power loss in power conversion applications.
Merkmale
KI-Übersetzung
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- SON 5 mm × 6 mm plastic package
Anwendungen
KI-Übersetzung
- Point-of-load synchronous buck converter for networking, telecom, and computing systems
- Optimized for synchronous FET applications
C2872963 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| CSD16401Q5T | TI | Alt. Verpackung | VSON-8(5x6) | 29 | $ 1.8227 | ||
| RS6G120CHTB1 | ROHM | Ähnliche | HSOP-8 | 10 | $ 1.8935 | ||
| XRS280N03C | XNRUSEMI | Ähnliche | PDFN-8L(5x6) | 9,688 | $0.8626 $0.9079 | ||
| NTMFS5C410NLT1G | onsemi | Ähnliche | SO-8FL | 3,954 | $ 1.0908 | ||
| MDDG03R01G | MDD(Microdiode Semiconductor) | Ähnliche | PDFN-8L(5x6) | 1,783 | $0.7364 $0.7834 |