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NCE NCEP085N10AS
| Produttore | NCEAsian Brands |
| Cod. Prod. | NCEP085N10AS |
| Cod. LCSC | C2686704 |
| Imballo | SOP-8 |
| Numero Cliente | |
| Attr. chiave | N-Channel, Current:17A, Voltage:100V |
| Scheda Tecnica | NCE NCEP085N10AS |
| Parti alternative | 1 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | SOP-8 | |
| Output Capacitance(Coss) | 316pF | |
| Pd - Power Dissipation | 3.5W | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 14.5pF | |
| RDS(on) | 11.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.68nF | |
| Gate Charge(Qg) | 76nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | SOP-8 | |
| Output Capacitance(Coss) | 316pF | |
| Pd - Power Dissipation | 3.5W | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 17A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 14.5pF | |
| RDS(on) | 11.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.68nF | |
| Gate Charge(Qg) | 76nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
NCEP085N10AS employs Super-Trench II technology, uniquely optimized to deliver the highest efficiency high-frequency switching performance. The combination of ultra-low RDS(ON) and Qg minimizes both conduction and switching power losses. This device is ideal for high-frequency switching and synchronous rectification.
Caratteristiche
Traduzione AI
- VDS = 100V, ID = 17A
- RDS(ON) = 8.0mΩ (typical) @ VGS = 10V
- RDS(ON) = 10.0mΩ (typical) @ VGS = 4.5V
- Excellent gate charge × RDS(ON) figure of merit (FOM)
- Ultra-low on-resistance RDS(ON)
- Operating temperature 150°C
- Lead-free lead finish
- 100% UIS tested
- 100% ΔVds tested
Applicazioni
Traduzione AI
- DC/DC Converter — Ideal for high-frequency switching and synchronous rectification
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Esaurito
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Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.5579 | $ 0.56 |
| 10+ | $ 0.4416 | $ 4.42 |
| 30+ | $ 0.3826 | $ 11.48 |
| 100+ | $ 0.3252 | $ 32.52 |
| 500+ | $ 0.2901 | $ 145.05 |
| 1,000+ | $ 0.271 | $ 271.00 |
Package Standard4000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | SOP-8 | |
| Output Capacitance(Coss) | 316pF | |
| Pd - Power Dissipation | 3.5W | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 14.5pF | |
| RDS(on) | 11.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.68nF | |
| Gate Charge(Qg) | 76nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | SOP-8 | |
| Output Capacitance(Coss) | 316pF | |
| Pd - Power Dissipation | 3.5W | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 17A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 14.5pF | |
| RDS(on) | 11.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.68nF | |
| Gate Charge(Qg) | 76nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
NCEP085N10AS employs Super-Trench II technology, uniquely optimized to deliver the highest efficiency high-frequency switching performance. The combination of ultra-low RDS(ON) and Qg minimizes both conduction and switching power losses. This device is ideal for high-frequency switching and synchronous rectification.
Caratteristiche
Traduzione AI
- VDS = 100V, ID = 17A
- RDS(ON) = 8.0mΩ (typical) @ VGS = 10V
- RDS(ON) = 10.0mΩ (typical) @ VGS = 4.5V
- Excellent gate charge × RDS(ON) figure of merit (FOM)
- Ultra-low on-resistance RDS(ON)
- Operating temperature 150°C
- Lead-free lead finish
- 100% UIS tested
- 100% ΔVds tested
Applicazioni
Traduzione AI
- DC/DC Converter — Ideal for high-frequency switching and synchronous rectification
C2686704 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| NCEP082N10AS | NCE | Simili | SOP-8 | 0 | $ 0.6073 |
1 altri componenti alternativi.Visualizza tutti i sostituti