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EDA-ModelleEasyEDA
DIODES MMBTA06Q-7-F
| Hersteller | |
| Herst.-Teilenr. | MMBTA06Q-7-F |
| LCSC-Nr. | C248315 |
| Verp. | SOT-23 |
| Kundennummer | |
| Hauptmerkm. | TRANS NPN 80V 500mA SOT-23 |
| Datenblatt | DIODES MMBTA06Q-7-F |
| RoHS-Konformität | 5 Dokumente verfügbar |
| Alternativteile | 20 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | DIODES | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 4V | |
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 500mA | |
| Pd - Power Dissipation | 350mW | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 250mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | DIODES | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 4V |
| Typ | Beschreibung | |
|---|---|---|
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 500mA | |
| Pd - Power Dissipation | 350mW | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 250mV |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching
- Complementary PNP Type: MMBTA55 and MMBTA56
- Totally Lead-Free & Fully RoHS compliant
- Halogen and Antimony Free. “Green” Device
- The MMBTA05Q and MMBTA06Q are suitable for automotive applications requiring specific change control; these parts are AEC - Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 490
490 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.0799 | $ 0.40 |
| 50+ | $ 0.0633 | $ 3.17 |
| 150+ | $ 0.0551 | $ 8.27 |
| 500+ | $ 0.0489 | $ 24.45 |
| 3,000+ | $ 0.0439 | $ 131.70 |
| 6,000+ | $ 0.0414 | $ 248.40 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | DIODES | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 4V | |
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 500mA | |
| Pd - Power Dissipation | 350mW | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 250mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | DIODES | |
| Verp. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 4V |
| Typ | Beschreibung | |
|---|---|---|
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 500mA | |
| Pd - Power Dissipation | 350mW | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 250mV |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching
- Complementary PNP Type: MMBTA55 and MMBTA56
- Totally Lead-Free & Fully RoHS compliant
- Halogen and Antimony Free. “Green” Device
- The MMBTA05Q and MMBTA06Q are suitable for automotive applications requiring specific change control; these parts are AEC - Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities
C248315 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| MMBTA06-7-F | DIODES | SOT-23 | 14,880 | $ 0.0316 | ||
| MMBTA06 | LGE | SOT-23 | 4,140 | $ 0.0307 | ||
| MMBTA06 | UMW | SOT-23 | 5,100 | $ 0.0313 | ||
| SMMBTA06LT1G | onsemi | SOT-23 | 3,860 | $ 0.0646 | ||
| MMBTA06 | MSKSEMI | SOT-23 | 2,980 | $ 0.0315 | ||
| MMBTA06 | BORN | SOT-23 | 800 | $ 0.0251 | ||
| MMBTA06 | HXY MOSFET | SOT-23 | 2,930 | $0.0228 $0.0239 | ||
| MMBTA06 | ElecSuper | SOT-23 | 2,220 | $ 0.0247 | ||
| MMBTA06 | Slkor | SOT-23 | 12,960 | $ 0.0319 | ||
| MMBTA06LT1G | onsemi | SOT-23 | 165,200 | $ 0.0369 | ||
| MMBTA06_R1_00301 | PANJIT | SOT-23 | 2,240 | $ 0.0341 | ||
| MMBTA06-AU_R1_000A1 | PANJIT | SOT-23 | 1,550 | $ 0.0544 | ||
| MMBTA06 | R+O | SOT-23 | 86,380 | $ 0.0406 | ||
| CMPTA06 TR PBFREE | Central | SOT-23 | 0 | $ 0.2878 | ||
| MMSTA06T146 | ROHM | TO-236-3(SOT-23-3) | 0 | $ 0.1316 | ||
| SSTA06HZGT116 | ROHM | TO-236-3(SOT-23-3) | 0 | $ 0.103 | ||
| SSTA06T116 | ROHM | SOT-23 | 0 | $ 0.1883 | ||
| MMBTA06G-AE3-R | UTC | SOT-23 | 0 | $ 0.033 | ||
| MMBTA06 | Shikues | SOT-23 | 0 | $0.0320 $0.0336 | ||
| SMBTA 06 E6433 | Infineon | SOT-23 | 0 | $ 0.066 |