Abbildung ähnlich
EDA-ModelleEasyEDA
Littelfuse/IXYS IXTA52P10P-TRL
| Hersteller | |
| Herst.-Teilenr. | IXTA52P10P-TRL |
| LCSC-Nr. | C22400547 |
| Verp. | TO-263AA |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 100V 52A TO-263AA |
| Datenblatt | Littelfuse/IXYS IXTA52P10P-TRL |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse/IXYS | |
| Verp. | TO-263AA | |
| Output Capacitance(Coss) | 1.015nF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 52A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 275pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.845nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse/IXYS | |
| Verp. | TO-263AA | |
| Output Capacitance(Coss) | 1.015nF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 52A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 275pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.845nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Industry standard package
- Fast intrinsic diode
- Dynamic dv/dt rating
- Avalanche rating
- Rugged Polar™ process
- Low gate charge (QG) and low on-resistance (Rds(ON))
- Low drain-to-heatsink capacitance
- Low package inductance
- Easy installation
- Space-saving
- High power density
Anwendungen
KI-Übersetzung
- High-side switching
- Push-pull amplifiers
- DC choppers
- Current regulators
- Automatic test equipment
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 10
10 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 13.8448 | $ 13.84 |
| 10+ | $ 13.2803 | $ 132.80 |
| 30+ | $ 12.3042 | $ 369.13 |
| 100+ | $ 11.45 | $ 1145.00 |
Standardgehäuse800/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse/IXYS | |
| Verp. | TO-263AA | |
| Output Capacitance(Coss) | 1.015nF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 52A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 275pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.845nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse/IXYS | |
| Verp. | TO-263AA | |
| Output Capacitance(Coss) | 1.015nF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 52A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 275pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.845nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Industry standard package
- Fast intrinsic diode
- Dynamic dv/dt rating
- Avalanche rating
- Rugged Polar™ process
- Low gate charge (QG) and low on-resistance (Rds(ON))
- Low drain-to-heatsink capacitance
- Low package inductance
- Easy installation
- Space-saving
- High power density
Anwendungen
KI-Übersetzung
- High-side switching
- Push-pull amplifiers
- DC choppers
- Current regulators
- Automatic test equipment
C22400547 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| IXTA52P10P | Littelfuse/IXYS | Ähnliche | TO-263AA | 300 | $ 8.2711 | ||
| SP010P10GHTD | Siliup | Ähnliche | TO-263 | 81 | $ 1.2158 | ||
| SUM90P10-19L-E3-VB | VBsemi Elec | Ähnliche | TO-263(D2PAK) | 74 | $2.6870 $2.8284 | ||
| XRS120P10G | XNRUSEMI | Ähnliche | TO-263 | 47 | $1.2066 $1.2701 | ||
| CMB80P10 | Cmos | Ähnliche | TO-263 | 111 | $0.9015 $0.9489 |
5 weitere Alternativteile.Alle Ersatzprodukte anzeigen