15% OFF
- Pinbelegung
- Footprint
Abbildung ähnlich
EDA-ModelleEasyEDA
VBsemi Elec FQB9P25TM-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | FQB9P25TM-VB |
| LCSC-Nr. | C22389293 |
| Verp. | TO-263(D2PAK) |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 150V 20A TO-263(D2PAK) |
| Datenblatt | VBsemi Elec FQB9P25TM-VB |
| Alternativteile | 6 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Output Capacitance(Coss) | 330pF | |
| Pd - Power Dissipation | 2.1W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+100℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 150mΩ@10V;170mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 67nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Output Capacitance(Coss) | 330pF | |
| Pd - Power Dissipation | 2.1W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+100℃ | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 150mΩ@10V;170mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 67nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Power Switch - Load Switch for High-Current Applications - DC/DC Converter
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 10
10 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.4576$ 1.2390 | $ 1.24 |
| 10+ | $ 1.2051$ 1.0244 | $ 10.24 |
| 50+ | $ 1.067$ 0.9070 | $ 45.35 |
| 100+ | $ 0.9098$ 0.7734 | $ 77.34 |
| 500+ | $ 0.8399$ 0.7140 | $ 357.00 |
| 1,000+ | $ 0.8098$ 0.6884 | $ 688.40 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Output Capacitance(Coss) | 330pF | |
| Pd - Power Dissipation | 2.1W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+100℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 150mΩ@10V;170mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 67nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-263(D2PAK) | |
| Output Capacitance(Coss) | 330pF | |
| Pd - Power Dissipation | 2.1W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+100℃ | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 150mΩ@10V;170mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 67nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Power Switch - Load Switch for High-Current Applications - DC/DC Converter
C22389293 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| VBL2152M | VBsemi Elec | TO-263(D2PAK) | 8 | $1.2916 $1.5195 | ||
| IPB720P15LMATMA1-VB | VBsemi Elec | TO-263 | 5 | $2.5460 $2.68 | ||
| IPB720P15LM-VB | VBsemi Elec | TO-263 | 5 | $2.5460 $2.68 | ||
| IRF6218S-VB | VBsemi Elec | TO-263(D2PAK) | 0 | $1.3848 $1.4576 | ||
| AUIRF6215STRL-VB | VBsemi Elec | TO-263 | 0 | $ 2.0444 | ||
| VBL2157N | VBsemi Elec | TO-263(D2PAK) | 0 | $ 2.7722 |