ISSI IS62WV51216EFBLL-45TLI-TR

The ISSI IS62/65WV51216EFALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability. This highly reliable process coupled with innovative circuit design techniques including ECC (SEC-DEC: Single Error Correcting-Double Error Detecting), yields highperformance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected), or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and Lower Byte (LB#) access. The IS62/65WV51216EFALL/BLL are packaged in the JEDEC standard 48-pin mini BGA (6mmx8mm), and 44-pin TSOP (TYPE II)

• High-speed access time: 45ns, 55ns
• CMOS low power operation
• Operating Current: 35mA (max.)
• CMOS standby Current: 5.5uA (typ.)
• TTL compatible interface levels
• Single power supply
• 1.65V - 2.2V VDD (IS62/65WV51216EFALL) – 2.2V - 3.6V VDD (IS62/65WV51216EFBLL)
• Optional ERR1/ERR2 pin:
• ERR1: indicates 1-bit error detection and correction.
• ERR2: indicates 2-bit error detection
• Three state outputs
• Commercial, Industrial and Automotive temperature support
• Lead-free available