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MICROCHIP MCP6C02T-020H/Q8B

Hersteller
MICROCHIP
Herst.-Teilenr.
MCP6C02T-020H/Q8B
LCSC-Nr.
C2059282
Verp.
TDFN-8-EP(3x3)
Kundennummer
Hauptmerkm.
TDFN-8-EP(3x3) Instrumentation, Op Amps, Buffer Amps RoHS
DatenblattMICROCHIP MCP6C02T-020H/Q8B
RoHS-Konformität2 Dokumente verfügbar
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Zur BOM-Liste hinzufügen
Stk.E-Preis(Nur als Referenz)Gesamtbetrag
1+$ 4.7507$ 4.75
10+$ 4.0668$ 40.67
30+$ 3.6623$ 109.87
100+$ 3.2516$ 325.16
500+$ 3.0617$ 1530.85
1,000+$ 2.9768$ 2976.80
Standardgehäuse6000/Full Reel
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Produktspezifikationen

Alle
TypBeschreibung
KategorieIntegrated Circuits (ICs)/Linear/Amplifiers/Instrumentation, Op Amps, Buffer Amps
HerstellerMICROCHIP
Verp.TDFN-8-EP(3x3)
FeaturesZero drift / auto-zero;Programmable gain
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Beschreibung

KI-Übersetzung

The Microchip Technology Inc. MCP6C02 high-side current sense amplifier is offered with preset gains of 20, 50 and 100 V/V. The Common-mode input range (V_IP) is +3V to +65V. The Differential-mode input range (V_DM = V_IP - V_IM) supports unidirectional and bidirectional applications. The power supply can be set between 2.0V and 5.5V. Parts in the SOT-23 package are specified over -40°C to +125°C (E-Temp), while parts in the 3x3 VDFN package are specified over -40°C to +150°C (H-Temp). The Zero-Drift architecture supports very low input errors, which allow a design to use shunt resistors of lower value (and lower power dissipation).

Merkmale

KI-Übersetzung
  • Single Amplifier: MCP6C02
  • Bidirectional or Unidirectional
  • Input (Common-mode) Voltages: - +3.0V to +65V, specified - +2.8V to +68V, operating - -0.3V to +70V, survival
  • Power Supply: - 2.0V to 5.5V - Single or Dual (Split) Supplies
  • High DC Precision: - VOS: ±1.65 μV (typical) - CMRR: 154 dB (typical) - PSRR: 138 dB (typical) - Gain Error: ±0.1% (typical)
  • Preset Gains: 20, 50 and 100 V/V
  • POR Protection: - HV POR for V_IP - V_SS - LV POR for V_DD - V_SS
  • Bandwidth: 500 kHz (typical)
  • Supply Currents: - IDD: 490 μA (typical) - IBP: 170 μA (typical)
  • Enhanced EMI Protection: - EMIRR: 118 dB at 2.4 GHz (typical)
  • Specified Temperature Ranges: - -40°C to +125°C (E-Temp part) - -40°C to +150°C (H-Temp part)

Anwendungen

KI-Übersetzung
  • Automotive
  • Motor Control
  • Analog Level Shifter
  • Industrial Computing
  • Battery Monitor/Tester