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Modelos EDAEasyEDA
Infineon IKZA40N65EH7XKSA1
| Fabricante | |
| N.º de pieza fab. | IKZA40N65EH7XKSA1 |
| Nº LCSC | C20191534 |
| Emb. | PG-TO247-4-STD-NT3.7 |
| Número de Cliente | |
| Atrib. clave | 210W 80A 650V PG-TO247-4-STD-NT3.7 Single IGBTs RoHS |
| Hoja de Datos | Infineon IKZA40N65EH7XKSA1 |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Fabricante | Infineon | |
| Emb. | PG-TO247-4-STD-NT3.7 | |
| Td(off) | 134ns | |
| Pd - Power Dissipation | 210W | |
| Td(on) | 13ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 9.1pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.85V | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.4V | |
| Collector Cut-Off Current (Ices) | 10uA | |
| Reverse Recovery Time(trr) | 49.6ns | |
| Switching Energy(Eoff) | 360uJ | |
| Turn-On Energy (Eon) | 370uJ | |
| Input Capacitance(Cies) | 2.026nF | |
| Gate Charge(Qg) | 81nC@15V | |
| Output Capacitance(Coes) | 71.4pF |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Fabricante | Infineon | |
| Emb. | PG-TO247-4-STD-NT3.7 | |
| Td(off) | 134ns | |
| Pd - Power Dissipation | 210W | |
| Td(on) | 13ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 9.1pF | |
| IGBT Type | - |
| Tipo | Descripción | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.85V | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.4V | |
| Collector Cut-Off Current (Ices) | 10uA | |
| Reverse Recovery Time(trr) | 49.6ns | |
| Switching Energy(Eoff) | 360uJ | |
| Turn-On Energy (Eon) | 370uJ | |
| Input Capacitance(Cies) | 2.026nF | |
| Gate Charge(Qg) | 81nC@15V | |
| Output Capacitance(Coes) | 71.4pF |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- VCE = 650V - IC = 40A
- Low switching losses
- Very low collector-emitter saturation voltage VCEsat
- Very soft, fast-recovery anti-parallel diode
- Smooth switching characteristics
- Moisture resistant
- Optimized for hard switching, two-level and three-level topologies
- Complete product family and PSpice models
Aplicaciones
Traducción por IA
- Industrial uninterruptible power supplies
- Electric vehicle charging
- String inverters
- Welding
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Fabricante | Infineon | |
| Emb. | PG-TO247-4-STD-NT3.7 | |
| Td(off) | 134ns | |
| Pd - Power Dissipation | 210W | |
| Td(on) | 13ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 9.1pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.85V | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.4V | |
| Collector Cut-Off Current (Ices) | 10uA | |
| Reverse Recovery Time(trr) | 49.6ns | |
| Switching Energy(Eoff) | 360uJ | |
| Turn-On Energy (Eon) | 370uJ | |
| Input Capacitance(Cies) | 2.026nF | |
| Gate Charge(Qg) | 81nC@15V | |
| Output Capacitance(Coes) | 71.4pF |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Fabricante | Infineon | |
| Emb. | PG-TO247-4-STD-NT3.7 | |
| Td(off) | 134ns | |
| Pd - Power Dissipation | 210W | |
| Td(on) | 13ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 9.1pF | |
| IGBT Type | - |
| Tipo | Descripción | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.85V | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.4V | |
| Collector Cut-Off Current (Ices) | 10uA | |
| Reverse Recovery Time(trr) | 49.6ns | |
| Switching Energy(Eoff) | 360uJ | |
| Turn-On Energy (Eon) | 370uJ | |
| Input Capacitance(Cies) | 2.026nF | |
| Gate Charge(Qg) | 81nC@15V | |
| Output Capacitance(Coes) | 71.4pF |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- VCE = 650V - IC = 40A
- Low switching losses
- Very low collector-emitter saturation voltage VCEsat
- Very soft, fast-recovery anti-parallel diode
- Smooth switching characteristics
- Moisture resistant
- Optimized for hard switching, two-level and three-level topologies
- Complete product family and PSpice models
Aplicaciones
Traducción por IA
- Industrial uninterruptible power supplies
- Electric vehicle charging
- String inverters
- Welding
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |