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Infineon 2ED1323S12PXUMA1

Producent
Infineon
Nr części prod.
2ED1323S12PXUMA1
Nr LCSC
C20189642
Opak.
PG-DSO-20-U03
Numer Klienta
Klucz. cechy
13V~20V 2.3A 2.3A PG-DSO-20-U03 Gate Drivers RoHS
Karta KatalogowaInfineon 2ED1323S12PXUMA1
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
Szt.Cena jedn.(Tylko do wglądu)Suma całkowita
1+$ 4.2304$ 4.23
10+$ 4.122$ 41.22
30+$ 4.0507$ 121.52
100+$ 3.9779$ 397.79
Standardowa Obudowa1000/Full Reel
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Specyfikacje Produktu

Wszystko
TypOpis
KategoriaIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ProducentInfineon
Opak.PG-DSO-20-U03
Input Logic Level - Low1.1V
Low Level Delay Time350ns
High Level Delay Time350ns
Quiescent Current600uA
Input Logic Level - High1.7V
Voltage - Supply13V~20V
Operating Temperature-40℃~+125℃
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)2.3A
Rise Time48ns
Fall Time48ns
FeaturesEnable shutdown;Overcurrent Protection;Built-in bootstrap diode
Current - Output High(IOH)2.3A
Load TypeMOSFET;IGBT
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Opis

Tłumaczenie AI

The 2ED132x family contains devices, which control IGBT or SiC MOSFET power devices with a maximum blocking voltage of +1200 V in half bridge configurations. There is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, the design is very robust against parasitic latch up across the operating temperature and voltage range. The two independent driver outputs are controlled at the low-side using two different CMOS resp. LSTTL compatible signals, down up to 3.3V logic. The device includes an under-voltage detection unit with hysteresis characteristic. The 2ED132x has symmetric undervoltage lockout levels, which support strongly the integrated ultrafast bootstrap diode. Additionally, the offline gate clamping function provides an inherent protection of the transistors for parasitic turn-on by floating gate conditions, when the IC is not supplied via VCC.

Funkcje

Tłumaczenie AI
  • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology - Floating channel designed for bootstrap operation
  • Maximum bootstrap voltage (VB node) of +1225 V
  • Operating voltages (VS node) up to +1200 V
  • Negative VS transient voltage immunity of 100 V - With repetitive 700 ns pulses
  • 2.3 A / 2.3 A peak output source / sink current capability
  • Integrated ultra-fast over-current protection (OCP) - ±5% high accuracy reference threshold - Less than 1 us over-current sense to output shutdown
  • Integrated Active Miller Clamp (AMC) with 2 A sink current capability
  • Integrated Short Circuit Clamp (SCC) function
  • Integrated ultra-fast, low resistance bootstrap diode
  • Integrated dead-time and shoot-through prevention logic (2ED1324S12P)
  • Enable, Fault, and programmable Fault clear RFE input Logic operational up to -8 V on VS Pin
  • Independent per channel undervoltage lockout (UVLO)
  • 25 V VCC supply voltage (maximum)
  • Separate Logic (VSS) and output ground (COM)
  • Greater than 5 mm clearance / creepage
  • 2 kV HBM ESD capability

Zastosowania

Tłumaczenie AI
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