DIODES DMN4060SVTQ-7
| Hersteller | |
| Herst.-Teilenr. | DMN4060SVTQ-7 |
| LCSC-Nr. | C19949879 |
| Verp. | TSOT-26 |
| Kundennummer | |
| Hauptmerkm. | 45V 4.3A 46mΩ@10V 1 N-channel N-Channel TSOT-26 Single FETs, MOSFETs RoHS |
| Datenblatt | DIODES DMN4060SVTQ-7 |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TSOT-26 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 45V | |
| Output Capacitance(Coss) | 58pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Ciss-Input Capacitance | 1.159nF | |
| Reverse Transfer Capacitance (Crss) | 42.5pF | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TSOT-26 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 45V | |
| Output Capacitance(Coss) | 58pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Ciss-Input Capacitance | 1.159nF |
| Typ | Beschreibung | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | 42.5pF | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
This MOSFET is designed to meet the stringent requirements of automotive applications. It complies with the AEC-Q101 standard and offers PPAP support, making it ideal for: DC-DC converters Power management functions
- Backlight illumination
Merkmale
KI-Übersetzung
- 100% UIS tested in production
- Low input capacitance
- Low on-resistance
- Fast switching speed
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free, "Green" device
- Suitable for automotive applications requiring specific change control; this product is AEC-Q101 qualified, PPAP capable, and manufactured in an IATF 16949 certified facility.
Anwendungen
KI-Übersetzung
- DC-DC Converter - Power Management - Backlight Illumination
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.4019 | $ 0.40 |
| 200+ | $ 0.1604 | $ 32.08 |
| 500+ | $ 0.155 | $ 77.50 |
| 1,000+ | $ 0.1524 | $ 152.40 |
Standardgehäuse3000/Full Bag | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TSOT-26 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 45V | |
| Output Capacitance(Coss) | 58pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Ciss-Input Capacitance | 1.159nF | |
| Reverse Transfer Capacitance (Crss) | 42.5pF | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TSOT-26 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 45V | |
| Output Capacitance(Coss) | 58pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Ciss-Input Capacitance | 1.159nF |
| Typ | Beschreibung | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | 42.5pF | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This MOSFET is designed to meet the stringent requirements of automotive applications. It complies with the AEC-Q101 standard and offers PPAP support, making it ideal for: DC-DC converters Power management functions
- Backlight illumination
Merkmale
KI-Übersetzung
- 100% UIS tested in production
- Low input capacitance
- Low on-resistance
- Fast switching speed
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free, "Green" device
- Suitable for automotive applications requiring specific change control; this product is AEC-Q101 qualified, PPAP capable, and manufactured in an IATF 16949 certified facility.
Anwendungen
KI-Übersetzung
- DC-DC Converter - Power Management - Backlight Illumination
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| DMN6040SVTQ-7 | DIODES | Ähnliche | TSOT-26 | 2,880 | $ 0.265 | ||
| DMN6040SVTQ-13 | DIODES | Ähnliche | TSOT-26 | 10 | $ 0.5833 | ||
| FDC5661N-F085 | onsemi | Ähnliche | TSOT-23-6 | 265 | $ 0.6645 | ||
| DMN4060SVT-7 | DIODES | Ähnliche | TSOT-26 | 5 | $ 0.2045 | ||
| AP6N06LI | A Power microelectronics | Ähnliche | SOT-23-6L | 50 | $ 0.0756 |

