- Pinbelegung
- Footprint
Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi FDS8449
| Hersteller | |
| Herst.-Teilenr. | FDS8449 |
| LCSC-Nr. | C188510 |
| Verp. | SOIC-8 |
| Kundennummer | |
| Hauptmerkm. | 2.5W 40V 7.6A 3V 36mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi FDS8449 |
| RoHS-Konformität | 3 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SOIC-8 | |
| Output Capacitance(Coss) | 100pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 7.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 36mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 7.7nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SOIC-8 | |
| Output Capacitance(Coss) | 100pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 7.6A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 36mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 7.7nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
These N-channel MOSFETs are manufactured using onsemi's advanced POWERTRENCH process, which has been specially optimized to minimize on-resistance while maintaining excellent switching performance.
Merkmale
KI-Übersetzung
- 7.6 A, 40 V; RDS(on) = 29 mΩ at VGS = 10 V
- RDS(on) = 36 mΩ at VGS = 4.5 V
- Standard SMT package with high power handling capability
- Lead-free, halogen-free, and RoHS compliant
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.9163 | $ 0.92 |
| 10+ | $ 0.7977 | $ 7.98 |
| 30+ | $ 0.7376 | $ 22.13 |
| 100+ | $ 0.6775 | $ 67.75 |
| 500+ | $ 0.6434 | $ 321.70 |
| 1,000+ | $ 0.6239 | $ 623.90 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SOIC-8 | |
| Output Capacitance(Coss) | 100pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 7.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 36mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 7.7nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | SOIC-8 | |
| Output Capacitance(Coss) | 100pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 7.6A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 36mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 7.7nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
These N-channel MOSFETs are manufactured using onsemi's advanced POWERTRENCH process, which has been specially optimized to minimize on-resistance while maintaining excellent switching performance.
Merkmale
KI-Übersetzung
- 7.6 A, 40 V; RDS(on) = 29 mΩ at VGS = 10 V
- RDS(on) = 36 mΩ at VGS = 4.5 V
- Standard SMT package with high power handling capability
- Lead-free, halogen-free, and RoHS compliant
C188510 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| STN4526 | STANSON Tech. | SOP-8 | 5 | $ 0.0988 | ||
| AP9474GM-VB | VBsemi Elec | SO-8 | 29 | $0.4387 $0.5161 | ||
| STS7NF60L-VB | VBsemi Elec | SO-8 | 2,278 | $0.3373 $0.3968 | ||
| FDS5670-NL-VB | VBsemi Elec | SO-8 | 1,443 | $0.3040 $0.3576 | ||
| AP9474GM-HF-VB | VBsemi Elec | SO-8 | 280 | $0.4953 $0.5827 | ||
| AO4266-VB | VBsemi Elec | SO-8 | 50 | $0.4967 $0.5843 | ||
| IRF7855TRPBF-VB | VBsemi Elec | SO-8 | 35 | $0.5837 $0.6867 | ||
| TPC8050-H-VB | VBsemi Elec | SO-8 | 20 | $0.4657 $0.5478 | ||
| IRF7469TRPBF | Infineon | SO-8 | 199 | $ 1.1232 | ||
| HSM4002 | HUASHUO | SOP-8 | 0 | $ 0.0601 |