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Modele EDAEasyEDA
VISHAY SMBG110AHE3/5B
| Producent | |
| Nr części prod. | SMBG110AHE3/5B |
| Nr LCSC | C1847872 |
| Opak. | DO-215AA(SMBG) |
| Numer Klienta | |
| Klucz. cechy | 162VC Clamp 3.7A@10/1000us Ipp TVS DIODE DO-215AA(SMBG) |
| Karta Katalogowa | VISHAY SMBG110AHE3/5B |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Producent | VISHAY | |
| Opak. | DO-215AA(SMBG) | |
| Clamping Voltage | 162V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 3.7A@10/1000us | |
| Peak Pulse Power Dissipation (Ppp) | 600W@10/1000us | |
| Number of Channels | 1 | |
| Voltage - Breakdown | 123V | |
| type | TVS | |
| Polarity | Unidirectional | |
| Reverse Leakage Current (Ir) | 1uA | |
| Reverse Stand-Off Voltage (Vrwm) | 110V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Producent | VISHAY | |
| Opak. | DO-215AA(SMBG) | |
| Clamping Voltage | 162V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 3.7A@10/1000us | |
| Peak Pulse Power Dissipation (Ppp) | 600W@10/1000us |
| Typ | Opis | |
|---|---|---|
| Number of Channels | 1 | |
| Voltage - Breakdown | 123V | |
| type | TVS | |
| Polarity | Unidirectional | |
| Reverse Leakage Current (Ir) | 1uA | |
| Reverse Stand-Off Voltage (Vrwm) | 110V |
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Funkcje
Tłumaczenie AI
- Low profile package
- Ideal for automated placement
- Glass passivated chip junction
- Available in uni-directional and bi-directional RoHS
- 600 W peak pulse power capability with a COMPLIANT 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
- Excellent clamping capability
- Very fast response time
- Low incremental surge resistance
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified
Zastosowania
Tłumaczenie AI
- Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication.
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.4724 | $ 0.47 |
| 200+ | $ 0.1837 | $ 36.74 |
| 500+ | $ 0.1775 | $ 88.75 |
| 1,000+ | $ 0.1745 | $ 174.50 |
Standardowa Obudowa3200/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Producent | VISHAY | |
| Opak. | DO-215AA(SMBG) | |
| Clamping Voltage | 162V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 3.7A@10/1000us | |
| Peak Pulse Power Dissipation (Ppp) | 600W@10/1000us | |
| Number of Channels | 1 | |
| Voltage - Breakdown | 123V | |
| type | TVS | |
| Polarity | Unidirectional | |
| Reverse Leakage Current (Ir) | 1uA | |
| Reverse Stand-Off Voltage (Vrwm) | 110V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Producent | VISHAY | |
| Opak. | DO-215AA(SMBG) | |
| Clamping Voltage | 162V | |
| Operating Temperature | -55℃~+150℃ | |
| Peak Pulse Current (Ipp) | 3.7A@10/1000us | |
| Peak Pulse Power Dissipation (Ppp) | 600W@10/1000us |
| Typ | Opis | |
|---|---|---|
| Number of Channels | 1 | |
| Voltage - Breakdown | 123V | |
| type | TVS | |
| Polarity | Unidirectional | |
| Reverse Leakage Current (Ir) | 1uA | |
| Reverse Stand-Off Voltage (Vrwm) | 110V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Low profile package
- Ideal for automated placement
- Glass passivated chip junction
- Available in uni-directional and bi-directional RoHS
- 600 W peak pulse power capability with a COMPLIANT 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
- Excellent clamping capability
- Very fast response time
- Low incremental surge resistance
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified
Zastosowania
Tłumaczenie AI
- Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication.
C1847872 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| CJSMBJ100A | JSCJ | Podobne | SMBG | 2,240 | $ 0.053 | ||
| SMBJ100A | JSCJ | Podobne | SMBG | 350 | $ 0.0628 | ||
| MASMBG110AE3 | MICROCHIP | Podobne | DO-215AA(SMBG) | 0 | $ 7.1533 | ||
| MSMBG110A | MICROCHIP | Podobne | DO-215AA(SMBG) | 0 | $ 1.4582 | ||
| MSMBG110AE3 | MICROCHIP | Podobne | DO-215AA(SMBG) | 0 | $ 1.4582 |
5 więcej części alternatywnych.Wyświetl wszystkie zamienniki