Abbildung ähnlich
EDA-ModelleEasyEDA
TOSHIBA RN2405,LXHF
| Hersteller | |
| Herst.-Teilenr. | RN2405,LXHF |
| LCSC-Nr. | C17399376 |
| Verp. | TO-236-3(SOT-23-3) |
| Kundennummer | |
| Hauptmerkm. | 50V 80 100mA 200mW PNP 1 PNP Pre-Biased TO-236-3(SOT-23-3) Single, Pre-Biased Bipolar Transistors RoHS |
| Datenblatt | TOSHIBA RN2405,LXHF |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | TOSHIBA | |
| Verp. | TO-236-3(SOT-23-3) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 0.0468 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.2V | |
| Voltage - Input(Max)(VI(off)) | 800mV@0.1mA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | TOSHIBA | |
| Verp. | TO-236-3(SOT-23-3) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 0.0468 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.2V | |
| Voltage - Input(Max)(VI(off)) | 800mV@0.1mA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- AEC-Q101 qualified
- The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time.
- Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs.
- Complementary to RN1401 to RN1406
Anwendungen
KI-Übersetzung
- Switching
- Inverter Circuits
- Interfacing Driver Circuits
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.1061 | $ 0.11 |
| 200+ | $ 0.0424 | $ 8.48 |
| 500+ | $ 0.0409 | $ 20.45 |
| 1,000+ | $ 0.0402 | $ 40.20 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | TOSHIBA | |
| Verp. | TO-236-3(SOT-23-3) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 0.0468 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.2V | |
| Voltage - Input(Max)(VI(off)) | 800mV@0.1mA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | TOSHIBA | |
| Verp. | TO-236-3(SOT-23-3) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 0.0468 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.2V | |
| Voltage - Input(Max)(VI(off)) | 800mV@0.1mA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- AEC-Q101 qualified
- The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time.
- Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs.
- Complementary to RN1401 to RN1406
Anwendungen
KI-Übersetzung
- Switching
- Inverter Circuits
- Interfacing Driver Circuits
C17399376 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
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| NSVMMUN2135LT1G | onsemi | Ähnliche | SOT-23-3 | 1,000 | $ 0.139 |