TOSHIBA SSM6L16FETE85LF
| Fabricante | |
| N.º de pieza fab. | SSM6L16FETE85LF |
| Nº LCSC | C17249537 |
| Emb. | SOT-563(SOT-666) |
| Número de Cliente | |
| Atrib. clave | 20V 100mA 150mW 1 N-Channel + 1 P-Channel SOT-563(SOT-666) FET, MOSFET Arrays RoHS |
| Hoja de Datos | TOSHIBA SSM6L16FETE85LF |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 5 |
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | TOSHIBA | |
| Emb. | SOT-563(SOT-666) | |
| Reverse Transfer Capacitance (Crss) | - | |
| Ciss-Input Capacitance | 9.3pF | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | - | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 100mA | |
| RDS(on) | 2.2Ω@2.5V;8Ω@2.5V | |
| Pd - Power Dissipation | 150mW | |
| Type | N-Channel + P-Channel | |
| Configuration | - | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | TOSHIBA | |
| Emb. | SOT-563(SOT-666) | |
| Reverse Transfer Capacitance (Crss) | - | |
| Ciss-Input Capacitance | 9.3pF | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | - | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 100mA |
| Tipo | Descripción | |
|---|---|---|
| RDS(on) | 2.2Ω@2.5V;8Ω@2.5V | |
| Pd - Power Dissipation | 150mW | |
| Type | N-Channel + P-Channel | |
| Configuration | - | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
Descripción
MwT-PH4F is an AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) device with a nominal gate length of 0.25 microns and a gate width of 180 microns, making it well-suited for applications requiring high gain and medium power at frequencies up to 28 GHz. The device is equally effective in broadband (e.g., 6 to 18 GHz) or narrowband applications. The die is fabricated using a reliable metal system and passivated to ensure excellent reliability.
Características
- Small package
- Low on-resistance Q1: RDS(ON) = 4Ω (max) (@VGS = 2.5 V)
- Low on-resistance Q2: RDS(ON) = 12Ω (max) (@VGS = -2.5 V)
Aplicaciones
- High-speed switching applications
- Analog switch applications
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | TOSHIBA | |
| Emb. | SOT-563(SOT-666) | |
| Reverse Transfer Capacitance (Crss) | - | |
| Ciss-Input Capacitance | 9.3pF | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | - | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 100mA | |
| RDS(on) | 2.2Ω@2.5V;8Ω@2.5V | |
| Pd - Power Dissipation | 150mW | |
| Type | N-Channel + P-Channel | |
| Configuration | - | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | TOSHIBA | |
| Emb. | SOT-563(SOT-666) | |
| Reverse Transfer Capacitance (Crss) | - | |
| Ciss-Input Capacitance | 9.3pF | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | - | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 100mA |
| Tipo | Descripción | |
|---|---|---|
| RDS(on) | 2.2Ω@2.5V;8Ω@2.5V | |
| Pd - Power Dissipation | 150mW | |
| Type | N-Channel + P-Channel | |
| Configuration | - | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
Descripción
MwT-PH4F is an AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) device with a nominal gate length of 0.25 microns and a gate width of 180 microns, making it well-suited for applications requiring high gain and medium power at frequencies up to 28 GHz. The device is equally effective in broadband (e.g., 6 to 18 GHz) or narrowband applications. The die is fabricated using a reliable metal system and passivated to ensure excellent reliability.
Características
- Small package
- Low on-resistance Q1: RDS(ON) = 4Ω (max) (@VGS = 2.5 V)
- Low on-resistance Q2: RDS(ON) = 12Ω (max) (@VGS = -2.5 V)
Aplicaciones
- High-speed switching applications
- Analog switch applications
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |