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EDA-ModelleEasyEDA
Winsok Semicon WSF12N10
| Hersteller | Winsok SemiconAsian Brands |
| Herst.-Teilenr. | WSF12N10 |
| LCSC-Nr. | C148434 |
| Verp. | TO-252 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 100V 10A TO-252 |
| Datenblatt | Winsok Semicon WSF12N10 |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Winsok Semicon | |
| Verp. | TO-252 | |
| Output Capacitance(Coss) | 50pF | |
| Ciss-Input Capacitance | 570pF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+170℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 10A | |
| Reverse Transfer Capacitance (Crss) | 30pF | |
| RDS(on) | 310mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.5nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Winsok Semicon | |
| Verp. | TO-252 | |
| Output Capacitance(Coss) | 50pF | |
| Ciss-Input Capacitance | 570pF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+170℃ | |
| Drain to Source Voltage | 100V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 10A | |
| Reverse Transfer Capacitance (Crss) | 30pF | |
| RDS(on) | 310mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.5nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The WSF12N10 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSF12N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Merkmale
KI-Übersetzung
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Green Device Available
Anwendungen
KI-Übersetzung
- High Frequency Point-of-Load Synchronous Buck Converter
- Networking DC-DC Power System
- Load Switch
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 1,390
1,390 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.2483$ 0.2235 | $ 1.12 |
| 50+ | $ 0.2011$ 0.1810 | $ 9.05 |
| 150+ | $ 0.1808$ 0.1628 | $ 24.42 |
| 500+ | $ 0.1556$ 0.1401 | $ 70.05 |
| 2,500+ | $ 0.1174$ 0.1057 | $ 264.25 |
| 5,000+ | $ 0.1107$ 0.0997 | $ 498.50 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Winsok Semicon | |
| Verp. | TO-252 | |
| Output Capacitance(Coss) | 50pF | |
| Ciss-Input Capacitance | 570pF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+170℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 10A | |
| Reverse Transfer Capacitance (Crss) | 30pF | |
| RDS(on) | 310mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.5nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Winsok Semicon | |
| Verp. | TO-252 | |
| Output Capacitance(Coss) | 50pF | |
| Ciss-Input Capacitance | 570pF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+170℃ | |
| Drain to Source Voltage | 100V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 10A | |
| Reverse Transfer Capacitance (Crss) | 30pF | |
| RDS(on) | 310mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.5nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The WSF12N10 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSF12N10 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Merkmale
KI-Übersetzung
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Green Device Available
Anwendungen
KI-Übersetzung
- High Frequency Point-of-Load Synchronous Buck Converter
- Networking DC-DC Power System
- Load Switch
C148434 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| WSF3410 | Winsok Semicon | Ähnliche | TO-252 | 324 | $0.4517 $0.5018 | ||
| WSF15N10 | Winsok Semicon | Ähnliche | TO-252 | 1,550 | $ 0.2873 | ||
| WSF70N10D | Winsok Semicon | Ähnliche | TO-252 | 2,500 | $0.7619 $0.9523 | ||
| WSF40N10A | Winsok Semicon | Ähnliche | TO-252 | 615 | $0.3456 $0.384 | ||
| WSF12N15 | Winsok Semicon | Ähnliche | TO-252 | 10 | $0.4243 $0.5303 |