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VISHAY SI7949DP-T1-E3
| Hersteller | |
| Herst.-Teilenr. | SI7949DP-T1-E3 |
| LCSC-Nr. | C142552 |
| Verp. | PowerPAK-SO-8 |
| Kundennummer | |
| Hauptmerkm. | 60V 5A 3.5W 80mΩ@4.5V 2 P-Channel PowerPAK-SO-8 FET, MOSFET Arrays RoHS |
| Datenblatt | VISHAY SI7949DP-T1-E3 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | VISHAY | |
| Verp. | PowerPAK-SO-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 5A | |
| Pd - Power Dissipation | 3.5W | |
| RDS(on) | 80mΩ@4.5V | |
| Type | P-Channel | |
| Configuration | - | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 40nC@10V | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Output Capacitance(Coss) | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | VISHAY | |
| Verp. | PowerPAK-SO-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 5A | |
| Pd - Power Dissipation | 3.5W | |
| RDS(on) | 80mΩ@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Configuration | - | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 40nC@10V | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Output Capacitance(Coss) | - |
Beschreibung
MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. PowerPAK is a new package technology that addresses these issues. The PowerPAK SO - 8 utilizes the same footprint and the same pin - outs as the standard SO - 8. This allows PowerPAK to be substituted directly for a standard SO - 8 package. Being a leadless package, PowerPAK SO - 8 utilizes the entire SO - 8 footprint, freeing space normally occupied by the leads, and thus allowing it to hold a larger die than a standard SO - 8. The bottom of the die attach pad is exposed for the purpose of providing a direct, low resistance thermal path to the substrate the device is mounted on. Finally, the package height is lower than the standard SO - 8, making it an excellent choice for applications with space constraints.
Merkmale
- Halogen - free According to IEC 61249 - 2 - 21 Available
- TrenchFET Power MOSFET
- New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile
- RoHS COMPLIANT HALOGEN FREE Available
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.5809 | $ 1.58 |
| 10+ | $ 1.5488 | $ 15.49 |
| 30+ | $ 1.5273 | $ 45.82 |
| 100+ | $ 1.5059 | $ 150.59 |
Standardgehäuse2000/Full Reel | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | VISHAY | |
| Verp. | PowerPAK-SO-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 5A | |
| Pd - Power Dissipation | 3.5W | |
| RDS(on) | 80mΩ@4.5V | |
| Type | P-Channel | |
| Configuration | - | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 40nC@10V | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Output Capacitance(Coss) | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | VISHAY | |
| Verp. | PowerPAK-SO-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 5A | |
| Pd - Power Dissipation | 3.5W | |
| RDS(on) | 80mΩ@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Configuration | - | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 40nC@10V | |
| Vgs | ±20V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Output Capacitance(Coss) | - |
Beschreibung
MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. PowerPAK is a new package technology that addresses these issues. The PowerPAK SO - 8 utilizes the same footprint and the same pin - outs as the standard SO - 8. This allows PowerPAK to be substituted directly for a standard SO - 8 package. Being a leadless package, PowerPAK SO - 8 utilizes the entire SO - 8 footprint, freeing space normally occupied by the leads, and thus allowing it to hold a larger die than a standard SO - 8. The bottom of the die attach pad is exposed for the purpose of providing a direct, low resistance thermal path to the substrate the device is mounted on. Finally, the package height is lower than the standard SO - 8, making it an excellent choice for applications with space constraints.
Merkmale
- Halogen - free According to IEC 61249 - 2 - 21 Available
- TrenchFET Power MOSFET
- New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile
- RoHS COMPLIANT HALOGEN FREE Available
C142552 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| HSBA6315 | HUASHUO | Ähnliche | PRPAK-8(5x6) | 3,009 | $ 0.6554 | ||
| DMPH6050SPDQ-13 | DIODES | Ähnliche | PowerDI5060-8 | 1 | $ 3.4849 | ||
| HP8JE5TB1 | ROHM | Ähnliche | HSOP-8 | 31 | $ 2.0022 | ||
| SI7949DP-T1-GE3 | VISHAY | Ähnliche | PowerPAKSO-8 | 0 | $ 1.0893 | ||
| VBQA4658 | VBsemi Elec | Ähnliche | DFN5x6-8 | 0 | $ 1.0918 |