MAXIM DS1245W-100IND+
| Produttore | |
| Cod. Prod. | DS1245W-100IND+ |
| Cod. LCSC | C1353345 |
| Imballo | EDIP-32 |
| Numero Cliente | |
| Attr. chiave | EDIP-32 Memory RoHS |
| Scheda Tecnica | MAXIM DS1245W-100IND+ |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | MAXIM | |
| Imballo | EDIP-32 | |
| Features | Auto store function;Low-voltage automatic write protection |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | MAXIM |
| Tipo | Descrizione | |
|---|---|---|
| Imballo | EDIP-32 | |
| Features | Auto store function;Low-voltage automatic write protection |
Descrizione
The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1245W devices can be used in place of existing 128k x8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1245W devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
Caratteristiche
- 10 years minimum data retention in the absence of external power
- Data is automatically protected during power loss
- Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory
- Unlimited write cycles
- Low-power CMOS
- Read and write access times of 100ns
- Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
- Optional industrial temperature range of -40℃ to +85℃, designated IND
- JEDEC standard 32-pin DIP package
- PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides lithium backup battery
- Standardized pinout for all nonvolatile SRAM products
- Detachment feature on PowerCap allows easy removal using a regular screwdriver
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 47.614 | $ 47.61 |
| 200+ | $ 18.4261 | $ 3685.22 |
| 500+ | $ 17.7797 | $ 8889.85 |
| 1,000+ | $ 17.4588 | $ 17458.80 |
Package Standard11/Full Tube | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | MAXIM | |
| Imballo | EDIP-32 | |
| Features | Auto store function;Low-voltage automatic write protection |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | MAXIM |
| Tipo | Descrizione | |
|---|---|---|
| Imballo | EDIP-32 | |
| Features | Auto store function;Low-voltage automatic write protection |
Descrizione
The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1245W devices can be used in place of existing 128k x8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1245W devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
Caratteristiche
- 10 years minimum data retention in the absence of external power
- Data is automatically protected during power loss
- Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory
- Unlimited write cycles
- Low-power CMOS
- Read and write access times of 100ns
- Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
- Optional industrial temperature range of -40℃ to +85℃, designated IND
- JEDEC standard 32-pin DIP package
- PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides lithium backup battery
- Standardized pinout for all nonvolatile SRAM products
- Detachment feature on PowerCap allows easy removal using a regular screwdriver
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B2A |
| CNHTS | 8536901100 |
| USHTS | 8536908585 |
| TARIC | 8536901000 |
| CAHTS | 8536900090 |
| BRHTS | 85369010 |
| INHTS | 85369010 |
| MXHTS | 8536.90.11 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B2A |
| CNHTS | 8536901100 |
| USHTS | 8536908585 |
| TARIC | 8536901000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8536900090 |
| BRHTS | 85369010 |
| INHTS | 85369010 |
| MXHTS | 8536.90.11 |

